A spark gap at pressures from 100 kPa to 7 MPa with various gases is fired by overvolting the electodes. The recovery of the gap is studied using a second identical pulse to test the voltage holdoff during the recovery period. A TV camera, interferometer and a spinning mirror camera are also used to record arc locations and density profiles. The gas is stationary during the recovery. Breakdown ...

In spite of their outstanding transport characteristics, InP high-electron mobility transistors (HEMT’s) deliver lower output power than GaAs pseudomorphic HEMT’s (PHEMT’s) throughout most of the millimeter-wave regime. However, the superior power-added efficiency of InP HEMT’s when compared with GaAs PHEMT’s makes this technology attractive for many applications. The reason for the relatively ...

Generally, tantalum capacitor failure modes have been discussed both for the standard manganese dioxide cathode and the new conductive polymer (CP) type. For standard tantalum in the normal operation mode, an electrical breakdown can be stimulated by an increase of the electrical conductance in channel by an electrical pulse or voltage level. This leads to capacitor destruction followed by ther...

The breakdown failure mechanisms for a family of power AlGaN/GaN HEMTs were studied. These devices were fabricated using a commercially available MMIC/RF technology with a semi-insulating SiC substrate. After a 10 min thermal annealing at 425 K, the transistors were subjected to temperature dependent electrical characteristics measurement. Breakdown degradation with a negative temperature coeff...

When assessing extremely low breakdown probabilities for selfrestoring gaseous insulation by automatic equipment, it is often more important to keep the actual number of breakdowns low, rather than to control the total number of voltage applications. In order to achieve this, one might use an inverse sampling procedure that commences the voltage application at a very low level, followed by appl...

We present the first systematic experimental and modeling results of noise corner frequency ( ) and noise corner frequency to cutoff frequency ratio ( ) for SiGe heterojunction bipolar transistors (HBTs) in a commercial SiGe RF technology. The and ratio are investigated as a function of operating collector current density, SiGe profile, breakdown voltage, and transistor geometry. We demonstrate...

Abstract: We present the optimization of the manufacturing process of the 5nm bulk-FinFET technology by using the 3D process and device simulations. In this paper, bysimulating the manufacturing processes, we focus on optimizing the manufacturingprocess to improve the drive current of the 5nm FinFET. The improvement of drivecurrent is one of the most important issues in ...

The voltage at which a gas confined in a gap ignites, i.e. the breakdown voltage, is a function of the total pressure (p) and the gap size (d). The understanding of gas discharge has been important in applications of weakly ionized plasmas and studying the properties of the plasma medium, such as nanotechnoogy, ion sources and thrusters [1-2]. We obtained the Paschen breakdown curve by consider...

In this paper, we report the development of a high breakdown voltage InGaP/GaAs HBT process for low-to-mid power and high-voltage power amplifier operation. To achieve the high-breakdown InGaP HBT, two different collector designs and collector-etch processes were investigated. The first device process approach uses a thick GaAs collector with low n doping. The process challenges and considerati...