نتایج جستجو برای: boron nitride fullerene
تعداد نتایج: 33220 فیلتر نتایج به سال:
Despite a recent flurry of experimental and simulation studies, an accurate estimate of the interaction strength of water molecules with hexagonal boron nitride is lacking. Here, we report quantum Monte Carlo results for the adsorption of a water monomer on a periodic hexagonal boron nitride sheet, which yield a water monomer interaction energy of -84 ± 5 meV. We use the results to evaluate the...
We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized in this superlattice. In particular, the Dirac cone of silicene is preserved. Due to the wide band gap of hexagonal boron nitride, the superlattice re...
We have measured the temperature-dependent thermal conductivity T of boron-carbon-nitride B-C-N and boron nitride BN nanotube mats. The thermal conductivity of B-C-N nanotubes is phonon dominated and reflects dimensional effect below 70 K. We employ a new analysis method to estimate the intrinsic T of BN nanotubes converted from B-C-N nanotubes, and find that at room temperature T of a multiwal...
We demonstrate a universal approach to extract one- and two-dimensional nanomaterials from contaminated water, which is based on a microscopic oil-water interface trapping mechanism. Results indicate that carbon nanotubes, graphene, boron nitride nanotubes, boron nitride nanosheets, and zinc oxide nanowires can be successfully extracted from contaminated water at a successful rate of nearly 100...
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence inde...
A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture wel...
The low-temperature adsorption of isolated transition metal adatoms (Mn, Co, and Fe) onto hexagonal boron nitride monolayers on Rh(111) creates a bistable adsorption complex. The first state considerably weakens the hexagonal boron nitride- (h-BN-) substrate bond for 60 BN unit cells, leading to a highly symmetric ring in STM images, while the second state is imaged as a conventional adatom and...
A systematic study of vacancies in single-walled carbon nanotubes and boron nitride nanotubes was carried out. First principles calculations within the framework of density functional theory using the CASTEP code are used to optimize fully the geometries of the systems. The generalized gradient approximation is used for the exchange-correlation functional. We find that the pristine single-walle...
The effect of defect complexes on the stability, structural and electronic properties of single-walled carbon nanotubes and boron nitride nanotubes is investigated using the ab initio pseudopotential density functional method implemented in the Castep code. We found more substantial atomic relaxations in the zig-zag carbon nanotube than the armchair one. We find that the B(C)B(c) defect introdu...
Nanostructures of boron nitride have attracted a great deal of interest due to their potential applications that comprise a broad range of topics, including biomedical technology, since it presents good chemical stability and suggests good biological inertia. This paper reports a facile and effective synthesis based on CVD process with new conditions to produce boron nitride nanotubes in higher...
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