We report scanning tunneling microscopy and ballistic electron emission microscopy studies of the electronic states of the uncovered and chemisorbed-oxygen covered surface of AlOx tunnel barrier layers. These states change when chemisorbed oxygen ions are moved into the oxide by either flood gun electron bombardment or by thermal annealing. While untreated samples exhibit band tails extending t...

The peculiarities in tunneling characteristics have been studied in the light of the controversy between s-wave and d-wave character of High Tc superconductivity. We show that anisotropic s-wave gap has the same low voltage power law conductance and two peak structure in the density of states as d-wave superconductors. The assymetric tunneling conductance and zero bias conductance for the c-axi...

An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal–oxide–silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrons and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band be...

Several paired, localized gap states were observed in semiconducting single-wall carbon nanotubes using spatially resolved scanning tunneling spectroscopy. A pair of gap states is found far from the band edges, forming deep levels, while the other pair is located near the band edges, forming shallow levels. With the help of a first-principles study, the former is explained by a vacancy-adatom c...

Metal-insulator-IV-VI compound semiconductor tunnel junctions were formed for both single and polycrystalline semiconductor material. I-V and conductance characteristics were taken as a function of temperature, and magnetic field. The experimental results were interpreted in terms of a conventional tunneling theory, and yielded information on Fermi energies, band gaps, temperature dependence of...

We consider tunneling of electromagnetic waves through a polariton band gap of a one-dimensional chain of atoms. We analytically show that a defect embedded in the structure gives rise to the resonance transmission at the frequency of a local polariton state associated with the defect. Numerical Monte Carlo simulations are used to examine properties of the electromagnetic band arising inside th...

The problem of inter-band tunneling in a semiconductor (Zener breakdown) in a nonstationary and homogeneous electric field is solved exactly. Using the exact analytical solution, the approximation based on classical trajectories is studied. A new mechanism of enhanced tunneling through static non-onedimensional barriers is proposed in addition to well known normal tunneling solely described by ...

In this paper, we proposed a 2-D analytical model for electrical characteristics such as surface potential, electric field and drain current of Silicon-on-Insulator Tunnel Field Effect Transistor (SOI TFETs) with a SiO2/High-k stacked gate-oxide structure. By using superposition principle with suitable boundary conditions, the Poisson’s equation has been solved to model the channel r...

CW-cavity ring down spectroscopy was used to record in a free jet expansion the spectrum of the absorption band in ((12)C(2)H(2))(2) with origin at 6547.6 cm(-1). It is a perpendicular band and corresponds to 2CH excitation in the hat unit of the T-shaped dimer. Calibration (better than ±1 × 10(-3) cm(-1) accuracy) and ring-down time (130 μs) were improved compared to a previous contribution (D...