نتایج جستجو برای: band gap
تعداد نتایج: 261994 فیلتر نتایج به سال:
Band structure parameters, such as the band gap, can be estimated using electrical transport properties. In many thermoelectric studies, the temperature dependent Seebeck coefficient is used to estimate the band gap using the Goldsmid–Sharp band gap formula: Eg 1⁄4 2eSmaxTmax. This important, fundamental parameter is useful for characterizing and understanding any semiconductor, but it is parti...
The influences of the filling rate on the photonic band gap properties of the two dimensional hex photonic crystals are investigated using the finite-difference time-domain method. When the filling rate f varies from 0.227 to 0.735 reminding the refractive index as 5, the number of the photonic band gaps decreases from 5 to 2 bands, the width of the photonic band gap between the transmit peaks ...
Opening a sizable band gap without degrading its high carrier mobility is as vital for silicene as for graphene to its application as a high-performance field effect transistor (FET). Our density functional theory calculations predict that a band gap is opened in silicene by single-side adsorption of alkali atom as a result of sublattice or bond symmetry breaking. The band gap size is controlla...
As thermalisation loss is the dominant loss process in the quantum dot intermediate band solar cells (QD-IBSCs), it has been investigated and calculated for a QD-IBSC, where IB is created by embedding a stack of InAs(1-x) Nx QDs with a square pyramid shape in the intrinsic layer of the AlPySb(1-y) p-i-n structure. IB, which is an optically coupled but electrically isolated mini-band, divides th...
Thin films of tin sulfide/cadmium sulfide (SnS/CdS) were prepared bythermal evaporation method at room temperature on a glass substrate and then annealedat different temperature with the aim of optimizing the optical properties of the materialfor use in photovoltaic solar cell devices. The effect of annealing on optical propertiesof SnS/CdS film was studied in the temper...
In this study, a full-potential density functional theory was used to investigate the effects of Ti substitution by different cations. In both rutile and anatase, Ti atom was replaced by Ce, Au, Sn, Ag, Mo, Nb, Zr, and Y. Phase stability, electronic structure and formation energy of oxygen vacancy were compared for rutile and anatase. The results indicated that substitution of Ce and Zr increas...
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