Concentrating on the high frequency aerospace demand of solid-state power amplifier (SSPA), this paper presents methodology and key technique a W-band 3-W SSPA that achieves efficiency while maintaining excellent reliability capability. An improved Magic-T combiner is utilized to achieve output power, eliminate influence parallel end-stage gallium-nitride high-electron-mobility-transistor (GaN ...

Mann, David William: 90nm CMOS Driver Amplifier for WCDMA Mobile Applications (Under the direction of Dr. Kevin Gard.) Integration is driving today’s cellular phone industry to create single chip cellphone systems. With the integration of Radio Frequency Transmitters into CMOS technology, robust circuits are needed that can scale with new technologies. This thesis explores the challenges of des...

In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design developed for long-term evolution (LTE) frequency operation, particularly the application of two-way radio to improve efficiency at back-off point from saturation output selected dual frequencies in LTE bandwidth. Measurements...

The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA) based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristic from 4.7 GHz up to 5.6 GHz and a continuously tunable ...