Several dihedral angles prediction methods were developed for protein structure prediction and their other applications. However, distribution of predicted angles would not be similar to that of real angles. To address this we employed generative adversarial networks (GAN) which showed promising results in image generation tasks. Generative adversarial networks are composed of two adversarially...

The authors investigate the effect of the thermal boundary resistance between the GaN layer and the substrate on the current–voltage characteristics of GaN MESFETs. Using material specific models for carrier drift-diffusion and thermal conductivity the authors determine the dependence of the breakdown voltage on thermal boundary resistance. The mechanism of the thermal breakdown in GaN transist...

The strain induced by lattice mismatch at the interface is responsible for the different value of the band discontinuities observed recently for the AlN/GaN (AlN on GaN) and the GaN/AlN (GaN on AlN) polar (0001) interface. We present a first-principles calculation of valence band offsets, interface dipoles, strain-induced piezoelectric fields, relaxed geometric structure, and formation energies...

Uniform GaN nanorod arrays are grown vertically by selective area growth on (left angle bracket 0001 right angle bracket) substrates. The GaN nanorods present six nonpolar {1⁻100} facets, which serve as growth surfaces for InGaN-based light-emitting diode quantum well active regions. Compared to growth on the polar {0001} plane, the piezoelectric fields in the multiple quantum wells (MQWs) can ...

In this work we have demonstrated nanoscale GaN device structures made from individual GaN nanowires and electrical contacts utilizing focused ion beam FIB induced Pt deposition. These GaN nanowires were grown by direct reaction of Ga vapor with NH3 and had diameters ranging from 100 nm to 250 nm and lengths up to 200 m. As-grown nanowires were dispersed on SiO2 coated p++ Si substrate. A 30 ke...

temperature. This wide spectral range enables potential applications from the infrared to the deep ultraviolet regions of the electromagnetic spectrum. This makes GaN-based nitrides one of the most important materials for light sources such as light-emitting diodes (LEDs). [ 1–5 ] Sapphire has long been used as a substrate for GaN-based LEDs, and silicon (Si) is becoming its strong competitor d...

The PL of porous GaN sample shows higher intensity with smaller FWHM and red-shifting relative to the as-grown sample. The energy gap for porous GaN sample was smaller compare to the as-grown sample. The SEM surface image of UV-assisted electrochemical etching process is shown a shape and size of pore which was formed on the surface of the GaN, therefore the shape of pores formed was in spheric...

GaN films have been grown at 1050 8C on porous silicon (PS) substrates by metalorganic vapour phase epitaxy. The annealing phase of PS has been studied in temperature range from 300 to 1000 8C during 10 min under a mixture of ammonia (NH3) and hydrogen (H2). The PS samples were characterized after annealing by scanning electronic microscope (SEM). We observed that the annealing under the GaN gr...

The synthesis of wurtzite gallium nitride (GaN) nanorods with triangular shape on c-Al2O3 substrates using a thermal chemical vapor deposition process was investigated. It was possible to control nanorod shape and growth mode of GaN nanorods by change of sample geometry in the chamber using a mixture of GaN powder and Ga metal with ammonia gas reaction. It was found that the GaN nanorods were g...