To clarify the mechanism of recently reported, ambipolar carrier injections into quasione-dimensional Mott insulators on which field-effect transistors are fabricated, we employ the one-dimensional Hubbard model attached to a tight-binding model for source and drain electrodes. To take account of the formation of Schottky barriers, we add scalar and vector potentials, which satisfy the Poisson ...

The diffusion of uni-directional magnetic fields by two dimensional turbulent flows in a weakly ionized gas is studied. The fields here are orthogonal to the plane of fluid motion. This simple model arises in the context of the decay of the mean magnetic flux to mass ratio in the interstellar medium. When ions are strongly coupled to neutrals, the transport of a large–scale magnetic field is dr...

The relaxation of the electron energy distribution function (EEDF) in the post-discharge of an omega/(2pi)=2.45 GHz microwave discharge in N2 has been investigated by solving the time-dependent Boltzmann equation, including a term taking into account electron losses by diffusion under the presence of a space-charge field. It is shown that although the high-energy tail of the EEDF is rapidly dep...

We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by cobalt electrodes. Scanning gate microscopy reveals that the bulk response of these devices is similar to gold-contacted p-CNFETs, confirming that Schottky barr...

Vertically grown carbon nanotubes have the potential for tera-level integration. However, the well-known ambipolar behavior limits the performance of carbon nanotube field effect transistors. In this work we demonstrate that a double gate structure effectively suppresses the ambipolar behavior. Using the double gate design excellent device characteristics along with the potential for high scale...

We studied the effects of multiband electronic structure on thermoelectric and electrical transport properties in normal state kagome superconductors $A$V$_3$Sb$_5$ ($A$ = K, Rb, Cs). In all three members, nature is manifested by sign changes temperature dependence Seebeck Hall resistivity, together with sublinear response isothermal Nernst to external magnetic fields charge ordered state. More...

Probing the surface states in Bi2Se3 via electronic transport measurements is difficult due to significantly larger numbers of bulk carriers. Herein, we report contribution both and on measured photocurrent at room temperature electrical low temperatures an epitaxial thin film intrinsic capped with a high K dielectric, Al2O3. The continuously increases when gate voltage swept toward negative si...