This study compares the performance of two types capacitive devices, indium tin oxide-aluminum oxide-zirconia aluminum oxide-silicon (IAZAOS) and oxide-hafnium (IAHAOS), as silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory (NVM) total dose ultraviolet radiation (UV TD) sensors. Results show that IAZAOS with zirconia oxide charge-trapping layer outperforms IAHAOS hafnium for a UV T...

In this research study, the effects of aluminum nitride (AlN) additive on the densification behavior and microstructure development of titanium diboride (TiB2) based ceramic matrix composite were investigated. In this way, a monolithic TiB2 ceramic and a TiB2–5 wt% AlN ultrahigh temperature ceramic composite were fabricated by spark plasma sintering (SPS) proces...

Ferrocyanide and ferricyanide ions have strong coagulation ability in a natural water system due to their high valences. Studies with aluminum oxide turbid waters showed significant differences in coagulation between simple ions (Cl-, SO2-4, Fe(CN)3-6, Fe(CN)4-6) and other species (H2PO-4) that interact chemically with the oxide surface. The evidence suggested that the adsorption of ferrocyanid...

In this study, an efficient and facile technique for preparing graphene oxide in suspension and powder forms was presented based on a modification on Hummers' method followed by an additional ultrasonic process. The method involved the provision of graphene oxide from graphite by reaction of potassium permanganate and sulfuric acid with stabilizing the medium complex. Furthermore, this study ev...

The effects of aluminum implantation on HfO2 thin films using plasma immersion ion implantation (Al– PIII samples) are investigated. X-ray photoelectron spectroscopy measurements reveal that most of the implanted aluminum atoms accumulated near the surface region of the oxide film. The greatly reduced leakage current, smaller flatband shift and steep transition from the accumulation to the depl...

Oxidation of aluminum nanoclusters is investigated with a parallel molecular-dynamics approach based on dynamic charge transfer among atoms. Structural and dynamic correlations reveal that significant charge transfer gives rise to large negative pressure in the oxide which dominates the positive pressure due to steric forces. As a result, aluminum moves outward and oxygen moves towards the inte...

: In this work, we have proposed a concept for the generation of three-dimensional (3D) nanostructured metal alloys of immiscible materials induced by megahertz-frequency ultrafast laser pulses. A mixture of two microparticle materials (aluminum and nickel oxide) and nickel oxide microparticles coated onto an aluminum foil have been used in this study. After laser irradiation, three different t...

This article is present the effected oxide capacitor in CMOS structure of integrated circuit level 5 micrometer technology. It has designed and basic structure of MOS diode. It establish with aluminum metallization layer by sputtering method, oxide insulator layer mode from silicon dioxide, n and p semiconductor layer, it has high capacitance concentrate. From the MOS diode structure silicon di...

A preliminary X-ray study of CaPtAl has been reported previously by Hulliger [J. Alloys Compd (1993), 196, 225-228] based on X-ray powder diffraction data without structure refinement. With the present single-crystal X-ray study, we confirm the assignment of the TiNiSi type for CaPtAl, in a fully ordered inverse structure. All three atoms of the asymmetric unit have .m. site symmetry. The struc...