The precipitation behavior of the α strengthening phase in metastable β-Ti alloys is highly dependent on heat treatment parameters such as quenching rate, heating rate and ageing temperature. In this paper we have investigated the influence of quenching rate on the formation of isothermal ω precipitates that have been regarded as potent nucleant sites for α precipitation. The results show that ...

Alloy composition homogeneity plays an important role in the device performance of III-V heterostructures. In this work, we study the spatial composition uniformity of n-In0.12Ga0.88As/i-In0.2Ga0.8As/p-GaAs core-shell nanopillars monolithically grown on silicon. Cross sections extracted along the axial and radial directions are examined with transmission electron microscopy and energy-dispersiv...

We use controlled annealing to tune the interfacial properties of a sub-monolayer and monolayer coverages of Ba atoms deposited on Ge(001), enabling the generation of either of two fundamentally distinct interfacial phases, as revealed by scanning tunneling microscopy. Firstly we identify the two key structural phases associated with this adsorption system, namely on-top adsorption and surface ...

Article history: Received 28.3.2013 Received in revised form 26.4.2013 Accepted 29.4.2013 Aluminum matrix composites containing 55% SiC particle reinforcing phase/SiC reinforcement phase particle and Kovar alloy 4J29 were chosen as the base metals. After nickel plating on the surface of SiCp/Al, two kinds of materials were soldered together by using Zn-Cd-Ag-Cu as the filler metal and ZnCl2 as ...

We present the results of a study of the energy spectrum of the ground state for shallow donors in quantum well structures, consisting of a single slab of GaAs sandwiched between two semiinfinite layers of Ga1 _ x Alx As. The effect of the position of the impurity atom within the central GaAs slab is investigated for different slab thicknesses and alloy compositions. Two limiting cases are pres...

Gallium Nitride (GaN) and its alloys with aluminum (AlxGa1-xN) and indium (InyGa1-yN & AlzIn1-zN) have gained lots of attention in optoelectronics research community in the last decade. These semiconductors relativity have a wide bandgap and easy to make n-type layers by Si doping and p-type layers by Mg doping. Consequently nitride alloys have proved to be very attractive candidate for the fab...

The wide gap polar semiconductors III-V nitrides, II-VI oxides, and ferroelectrics exhibit large spontaneous and piezoelectric polarization due to their nonsymmetric crystal structures. Electrical conductivity in alloys of such crystals is degraded by scattering from the varying polarization coupled to alloy disorder. We have modeled this effect by dipole scattering. We have calculated dipole s...