This study has demonstrated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrates with a SiNx/SiON composite gate dielectric. The threshold voltage shift in the devices was investigated. MIS-HEMTs dielectric exhibited superior uniformity and small hysteresis than reference device SiNx only variation of mainly related to trapping process by inter...

The oxygen plasma surface treatment prior to ohmic metal deposition was developed reduce the contact resistance (RC) for AlGaN/GaN high electron mobility transistors (HEMTs) on a high-resistive Si substrate. plasma, which produced by an inductively coupled (ICP) etching system, has been optimized varying combination of radio frequency (RF) and ICP power. By using transmission line method (TLM) ...

Herein, the AlGaN/GaN high-electron-mobility transistors (HEMTs) on silicon substrates using thick copper-metallized interconnects with Pt diffusion barrier layer for Ka-band application are reported. High output power density of 6.6 W mm−1 power-added efficiency (PAE) 45.6% at 28 GHz is achieved 4 × 50 μm device in continuous-wave (CW) mode. No obvious change drain–source current (I DS) observ...

We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) obtained by the two-dimensional device simulator MINIMOS-NT. The concise analysis of industrially relevant HEMT power devices of two different foundries for gate-lengths between lg = 140 nm and lg = 300 nm is carried out. Several aspects, including thermal and breakdown...

In this work, we study the scaling characteristics of In0.17Al0.83N/GaN high electron mobility transistors (HEMTs). Scaling of both the DC and RF performance are studied as a function of InAlN thickness, gate recess and gate length to explore the design space of high frequency InAlN/GaN devices. Surface passivation by Al2O3 deposited using atomic layer deposition (ALD) is also investigated as a...

We give a summary of the state-of-the-art of heterostructure RF-device simulators for industrial application based on III-V compound semiconductors and compare critical modeling issues. Results from two-dimensional hydrodynamic simulations of High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs) with MINIMOS-NT are presented. Simulation examples are chosen to ...

High-power operation of AlGaN/GaN highelectron-mobility transistors (HEMTs) requires efficient heat removal through the substrate. GaN composite substrates including high-thermal-conductivity substrates such as SiC and diamond are promising, but these composite substrates require careful attention to thermal resistances at GaN-substrate interfaces. We report on thermal characterization of GaN-o...

AlN passivation layers grown by atomic layer epitaxy have been implemented to passivate the surface of AlGaN/GaN high electron mobility transistors (HEMTs). These layers suppress surface charge trapping effects, such as current collapse, reduction of maximum drain current, and increase of dynamic on resistance. Each passivation scheme is characterized using pulsed I-V measurements, a novel on-w...