نتایج جستجو برای: 1300

تعداد نتایج: 5516  

Journal: :Chemical communications 2006
Piotr Krawiec Dorin Geiger Stefan Kaskel

Ordered mesoporous SiC with high specific surface area (650-800 m(2) g(-1)) and well ordered pore structure was obtained via nanocasting of polycarbosilanes into SBA-15 and subsequent conversion of the polymer at 1300 degrees C.

Journal: :FSM İlmî Araştırmalar İnsan ve Toplum Bilimleri Dergisi 2016

Journal: :Public health nutrition 2009
Olivier Bruyere Caroline De Cock Catherine Mottet Audrey Neuprez Olivier Malaise Jean-Yves Reginster

OBJECTIVE The WHO recommends a daily Ca intake for postmenopausal women of 1300 mg. The objective of the present study was to assess the dietary Ca intake in European postmenopausal osteoporotic women. DESIGN, SETTING AND SUBJECTS Assessment of dietary Ca intake (food and supplements) was performed with a validated self-questionnaire in 8524 osteoporotic women from nine European countries (Be...

2016
Linghui Meng Di Zhao Yan Pan Wenqing Ding Qing Wei Hua Li Pingjin Gao Jie Mi

UNLABELLED BACKGROUnD: To determine whether the professional Omron HBP-1300 blood pressure (BP) monitor meets American Association for the Advancement of Medical Instrumentation (AAMI) accuracy standards in Chinese children and adults. METHOD According to the AAMI protocol, simultaneous auscultatory measurements by two observers using a mercury manometer were obtained in participants using th...

2000
D. CHEN C. J. GILBERT X. F. ZHANG

 The growth of fatigue cracks at elevated temperatures (25–1300°C) is examined under cyclic loading in an in situ toughened, monolithic silicon carbide with Al-B-C additions (termed ABC–SiC), with specific emphasis on the roles of temperature, load ratio, cyclic frequency, and loading mode (static vs. cyclic). Extensive crack-growth data are presented, based on measurements from an electrical ...

2004
Nelson Tansu Jeng-Ya Yeh Luke J Mawst

Here we present the physics and device characteristics of high performance strain-compensated MOCVD-grown 1200 nm InGaAs and 1300–1400 nm InGaAsN quantum well (QW) lasers. Utilizing the GaAsP barriers surrounding the highly strained InGaAsN QW active regions, high performance QW lasers have been realized from 1170 nm up to 1400 nm wavelength regions. The design of the InGaAsN QW active region u...

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