0038-1101/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.sse.2011.10.024 ⇑ Corresponding author at: IBM Systems and Techn Monnet, Crolles, France. E-mail address: [email protected] (D. Gare A multiphonon-assisted model included in a Poisson–Schroedinger solver has been applied to the calculation of the capture/emission trapping rates of CMOS oxide interface defects. The dependenci...

With auditory augmentation, the authors describe building blocks supporting the design of data representation tools, which unobtrusively alter the auditory characteristics of structure-borne sounds. The system enriches the structure-borne sound of objects with a sonification of (near) real time data streams. The object’s auditory gestalt is shaped by data-driven parameters, creating a subtle di...

Article history: Available online 21 May 2008 The review of this paper was arranged by Jurriaan Schmitz 0038-1101/$ see front matter 2008 Elsevier Ltd. A doi:10.1016/j.sse.2008.04.012 * Address: Delft University of Technology, Mekel Netherlands. E-mail addresses: [email protected] This paper gives an overview of the state-of-the-art of CMOS image sensors. The main focus is put on ...

We conducted a large-scale association study to identify low-penetrance susceptibility alleles for chronic lymphocytic leukemia (CLL), analyzing 992 patients and 2707 healthy controls. To increase the likelihood of identifying disease-causing alleles we genotyped 1467 coding nonsynonymous single nucleotide polymorphisms (nsSNPs) in 865 candidate cancer genes, biasing nsSNP selection toward thos...

0038-1101/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.sse.2010.04.037 * Corresponding author. Tel.: +41 21 693 5633; fax E-mail address: [email protected] (M This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/Ioff characteristics. We demonstrate that a lateral strain profile corresponding to at leas...

0038-1101/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.sse.2012.05.001 ⇑ Corresponding author. E-mail addresses: [email protected], [email protected] (F We propose here a simple approximate, yet accurate, formula to easily calculate the maximum magnitude of the electric potential at the channel width’s midpoint of symmetric Double Gate (DG) MOSFETs with any arbitrary body doping...