The optical and electrical properties of Si rich SiC (SRSC) solar cell absorber layers will strongly depend on interfacial layers between the Si and the SiC matrix and in this work, we analyze hitherto undiscovered interfacial layers. The SRSC thin films were deposited using a plasma-enhanced chemical vapor deposition (PECVD) technique and annealed in a nitrogen environment at 1100 °C. The ther...

The propagation of the fundamental quasi-symmetric Lamb mode S(0) travelling along 3C-SiC/c-AlN composite plates is theoretically studied with respect to the AlN and SiC film thickness, the acoustic wave propagation direction and the electrical boundary conditions. The temperature effects on the phase velocity have been considered for four AlN/SiC-based electroacoustic coupling configurations, ...

The properties of co-sputtered Cu embedded amorphous SiC were studied. The effect of the microstructure features on the electrical conduction of the SiC films, with Cu volume% between 0% and 57%, was analysed by temperature dependent measurements, along with an effective-medium approximation model. The electrical conduction in Cu embedded amorphous SiC, was attributed to the tunnelling mechanis...

The performances of different promoters (CeO2, ZrO2 and Ce0.5Zr0.5O2 solid solution) modified Pd/SiC catalysts for methane combustion are studied. XRD and XPS results showed that Zr 4+ could be incorporated into the CeO2 lattice to form Zr0.5Ce0.5O2 solid solution. The catalytic activities of Pd/CeO2/SiC and Pd/ZrO2/SiC are lower than that of Pd/Zr0.5Ce0.5O2/SiC. The Pd/Zr0.5Ce0.5O2/SiC catalys...

We utilize the recently suggested capture-emission-time (CET) maps [1] for the first time for SiC technologies. CET maps are a very powerful characterization technique which allow the elegant and comprehensive analysis of oxide/interface traps at or near the semiconductor-dielectric interface and were originally developed to characterize degradation of Si based MOSFETs. For asprocessed SiC MOSF...

This paper investigates the impact of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) on the dynamic performance of permanent magnet synchronous motor (PMSM) drive systems. The characteristics of SiC MOSFETs are evaluated experimentally taking into account temperature variations. Then the switching characteristics are firstly introduced into the transfer funct...

The emergence of silicon carbide(SiC-) based power semiconductor switches, with their superior features compared with silicon(Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power...

Growth of 3C or 6H-SiC epilayers on low off-axis 6H-SiC substrates can be mastered by changing the size of the on axis plane formed by long terraces in the epilayer using geometrical control. The desired polytype can be selected in thick (~200 μm) layers of both 6H-SiC and 3C-SiC polytypes on substrates with off-orientation as low as 1.4 and 2 degrees. The resultant crystal quality of the 3C an...

This paper investigates the benefits of successive interference cancellation (SIC) based detectors over linear detectors. MIMO receiver with SIC, is simulated using two different modulation schemes namely BPSK and 16QAM modulation methods. The receiver design is less complex in nature. The simulation results obtained at Signal processing laboratory shows that by combining SIC with MMSE or SIC w...

Magnesium based metal matrix composites (MMCs) have been extensively studied as an attractive choice for automotive and aerospace applications due to their low density and superior specific properties including strength, stiffness and creep resistance. Xi et al [1] studied the Ti6Al-4V particulate (TAp) reinforced magnesium matrix composite which is fabricated by powder metallurgy route. The te...