Introduction MOSFETs with a high-mobility channel are attractive candidates for advanced CMOS device structures, since it is becoming increasingly difficult to enhance Si CMOS performance through traditional device scaling. The lower effective mass and higher mobility of carriers in germanium (Ge) compared with silicon (Si) (2x higher mobility for electrons and 4x for holes) has prompted renewe...

OBJECTIVES To assess occupational exposure to inorganic germanium (Ge) in workers from a producing plant, and to assess the health of these workers, with a special focus on respiratory, kidney, and liver functions. METHODS Cross sectional study of 75 workers exposed to Ge and 79 matched referents. Exposure was characterised by measuring air and urine concentrations of the element during a typ...

Glycoprotein E (gE) gene of pseudorabies virus (PRV) is conserved among diverse alphaherpesviruses and therefore is predicted to be important for virus survival. gE contributes to viral spread from cell to cell in a variety of hosts and is responsible, in part, for increased virulence or pathogenesis of the virus. Virulence and spread mediated by gE are thought to be highly correlated. We initi...

A bovine herpesvirus 1 (BoHV-1) defective in glycoprotein E (gE) was constructed from a Brazilian genital BoHV-1 isolate, by replacing the full gE coding region with the green fluorescent protein (GFP) gene for selection. Upon co-transfection of MDBK cells with genomic viral DNA plus the GFP-bearing gE-deletion plasmid, three fluorescent recombinant clones were obtained out of approximately 500...

Pollen flow from a 0.46 ha plot of genetically engineered (GE) Prunus domestica located in West Virginia, USA was evaluated from 2000-2010. Sentinel plum trees were planted at distances ranging from 132 to 854 m from the center of the GE orchard. Plots of mixed plum varieties and seedlings were located at 384, 484 and 998 m from the GE plot. Bee hives (Apis mellifera) were dispersed between the...

electronic effects were investigated on the singlet–triplet energy gaps of divalent unsaturated seven- membered ring r2c6h6m (m=c, si, ge, sn, pb, r= –h, -ch3, i-pr , t-bu) at b3lyp/6-311++g** level. all the triplet states of r2c6h6c were more stable than the related the singlet states while all the singlet states of r2c6h6m (m= si, ge, sn, pb, r= –h, -ch3, i-pr , t-bu) were more stable than th...

specification of a lock. What is a suitable abstract specification for a locking structure? To answer this question, we adopt the idea of specifying concurrent data structures via abstract predicates [1] and provide a lock interface in the form of two abstract procedures: lock and unlock. Every data structure, implementing the lock protocol, will require to provide the implementation of these p...

We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001), heated at relatively high temperature (starting with 250 °C). The samples were characterized by low energy electron diffraction (LEED), scanning tunneling microscopy (STM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS)...

The local structure of the enumeration degrees Ge is the partially ordered set of the enumeration degrees below the first jump 0e of the least enumeration degree 0e. Cooper [3] shows that Ge consists exactly of the Σ2 enumeration degrees, degrees which contain Σ2 sets, or equivalently consist entirely of Σ 0 2 sets. In investigating structural complexity of Ge, the natural question of what othe...

For the first time, Zr–Ge–N films were deposited on silicon and steel substrates by sputtering a Zr–Ge composite target in reactive Ar– N2 mixture. The films were characterised by electron probe microanalysis, X-ray diffraction, micro-Raman spectroscopy and depth-sensing indentation. The effects of the Ge content and substrate bias voltage on the films’ structure, internal stress, hardness and ...