Doped HfO2 and HfO2-ZrO2 compounds are gaining significant interest thanks to their ferroelectric properties in ultrathin films. Here, we show that ZrO2 could be a playground for doping strain engineering increase the thickness epitaxial thin Based on surface energy considerations supported by ab initio calculations, pure film exhibits rhombohedral phase (r-phase, with R3m space group) more sta...

Abstract Polymer dielectrics are preferred materials for high-energy-density capacitive energy storage. In particular, high-temperature that can withstand harsh conditions, e.g., ?150 °C, is of crucial importance advanced electronics and electrical power systems. Herein, dielectric polymer composites composed polyetherimide (PEI) matrix hafnium oxide (HfO2) nanoparticles presented. It found the...

Volatile threshold-switching (TS) devices have been used as selectors and to simulate neurons in neural networks. It is necessary find new ways improve their performance. The randomness of conductive filament (CF) growth the endurance are urgent issues at present. Here, we explored embedded Ag nanoislands (NIs) HfO2-based TS limit position CF facilitate its same time. Au/Ag(2 nm)/HfO2(4 nm)/Ag ...

Ultra thin HfO2 films were grown by the atomic layer deposition (ALD) technique using tetrakismethylethylaminohafnium (Hf[N(CH)3 (C2H5)]4) and ozone (O3) as the precursors and subsequently exposed to various plasma conditions, i.e., CCP (capacitively coupled plasma) and MMT (modified magnetron typed plasma) in N2 or N2/O2 ambient. The conventional CCP treatment was not effective in removing the...

Graphene is a hexagonally bonded sheet of carbon atoms that exhibits superior transport properties with a velocity of 108 cm /s and a room-temperature mobility of 15 000 cm2 /V s. How to grow gate dielectrics on graphene with low defect states is a challenge for graphene-based nanoelectronics. Here, we present the growth behavior of Al2O3 and HfO2 films on highly ordered pyrolytic graphite HOPG...

In this study, we investigate the deposition of high-k dielectric materials, namely Al2O3 and HfO2, using atomic layer for 4H-SiC metal-oxide-semiconductor applications. C-V measurements reveal that HfO2/SiO2/Al2O3/4H-SiC structure exhibits lower interface state density (Dit) a reduced number fixed trap charges (Neff) than HfO2/Al2O3/SiO2/4H-SiC structure. Furthermore, observe significant degra...

Recent discovery of HfO2-based and nitride-based ferroelectrics that are compatible to the semiconductor manufacturing process have revitalized field ferroelectric-based nanoelectronics. Guided by a simple design principle charge compensation density functional theory calculations, we discover HfO2-like mixed-anion materials, TaON NbON, can crystallize in polar Pca21 phase with strong thermodyn...

An increase in the density of states between the oxygen 2p bands and the Fermi level is seen with increasing Gd concentrations. In addition, for the Gd-doped HfO2 films, the Gd 4f photoexcitation peak at 5.5 eV below the valence band maximum was identified using resonant photoemission. Electrical measurements show pronounced rectification properties for lightly-doped Gd:HfO2 films on p-Si and f...