نتایج جستجو برای: شاخص mbe
تعداد نتایج: 76393 فیلتر نتایج به سال:
The naturally existing chalcogenide Bi2Se3 is topologically nontrivial due to the band inversion caused by strong spin-orbit coupling inside bulk of material. surface states are spin polarized, protected time-inversion symmetry, and thus robust scattering nonmagnetic defects. A high-purity topological insulator thin film can be easily grown via molecular beam epitaxy (MBE) on various substrates...
هدف ما در این پایان نامه، بررسی نیروی کازیمیر بر روی سطوح دی الکتریک زبر است. برای این بررسی، پس از شبیه سازی سطح یک دی الکتریک با مدل رشد mbe و مدل گسسته ی داس سارما در فضای دو بعدی، مشخصات سطح را بدست آورده و با استفاده از آن نیروی کازیمیر بین یک سطح زبر و یک سطح صاف را از رابطه ی لیفشیتز که برای فواصل کم تقریب زده شده است، بدست آوردیم. در آخر برای یک حالت خاص، نیروی کازیمیر دافعه را برای دو ...
The making of BaZrS3 thin films by molecular beam epitaxy (MBE) is demonstrated. forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. single-step MBE process results smooth on atomic scale, near-perfect stoichiometry and an atomically sharp interface LaAlO3 substrate. grow epitaxially via two competing growth modes: buffered epitaxy, a self-assembled laye...
Polycomb-group (PcG) proteins mediate repression of developmental regulators in a reversible manner, contributing to their spatiotemporally regulated expression. However, it is poorly understood how PcG-repressed genes are activated by developmental cues. Here, we used the mouse Meis2 gene as a model to identify a role of a tissue-specific enhancer in removing PcG from the promoter. Meis2 repre...
whose revenues continue to increase, the society remains in outstanding financial health. Society membership increased during FY 2012: membership-only subscriptions increased from 456 in 2011 to 732 in 2012, while society membership + journal subscriptions increased from 239 in 2011 to 313 in 2012. The society used its income to publish its two journals, MBE and GBE, and to support its annual m...
High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN ep...
Background: Antiplatelet treatment (APT) perioperative care in non-cardiac surgery (NCS) patients who have previously undergone percutaneous coronary intervention (PCI) is still a problem. Our goal was to figure out if serious adverse cardiac and cerebrovascular incidents (MACCE) bleeding events (MBE) are connected with the various APT regimens, either single (SAPT) or dual (DAPT). Methods: Thi...
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