A model of a tungsten chemical vapor deposition (CVD) system is developed to study the CVD system thermal dynamics and wafer temperature nonuniformities during a processing cycle. We develop a model for heat transfer in the system’s wafer/susceptor/guard ring assembly and discretize the modeling equation with a multiple-grid, nonlinear collocation technique. This weighted residual method is bas...

The influence of line-edge roughness (LER) of an optical photomask on the resulting printed wafer LER is investigated. The LER Transfer function (LTF) proposed by Naulleau and Gallatin, and later corrected by Tanabe, is shown to be a very useful tool for evaluating the low-pass filtering behavior of the imaging tool and its impact on the transfer of mask LER to the wafer. Highfrequency mask LER...

As wafer sizes increase, the clustering phenomenon of defects increases. Clustered defects cause the conventional Poisson yield model underestimate actual wafer yield, as defects are no longer uniformly distributed over a wafer. Although some yield models, such as negative binomial or compound Poisson models, consider the effects of defect clustering on yield prediction, these models have some ...

Through-wafer electrical interconnection is a critical technology for advanced packaging. In this paper, a novel capillary-effect-based solder pump has been proposed and analyzed, which could produce interconnects through and between silicon dies. The principle of this pump is to use the surface tension of a molten solder, introduced in the form of balls, to drive sufficient material into a dee...

This paper discusses a model designed to deal with pattern dependencies of deposition processes. It is a mesoscopic scale model in the sense that it deals with spatial scales on the order of 10 ?3 m to 10 ?2 m, which is intermediate between reactor scale and feature scale. This model accounts for the eeects of the microscopic surface structure via suitable averages obtained by a homog-enization...

An overview is given of the modeling of the hydrodynamics, transport phenomena and chemical reactions in single-wafer LPCVD reactors, both at the macroscopic (reactor-scale) and a t the microscopic (feature-scale) level. Examples of modeling results f o r single-wafer silicon LPCVD from silane and tungsten LPCVD from tungsten hexafluoride and hydrogen a r e presented and comparisons a r e made ...

The outcome of ulnar shortenings was compared to the outcome after arthroscopic wafer resections for ulnar impaction (or abutment) syndrome in patients with a positive ulnar variance. Both surgical techniques are described. The outcome was measured by the DASH score, the visual analogue score for pain and the working incapacity. The mean DASH score in the ulnar shortening group was 26, in the w...

In this paper, multiple orders per job type formation and release strategies are described for semiconductor wafer fabrication facilities (wafer fabs). Different orders are grouped into one job because orders of an individual customer very often fill only a portion of a Front-Opening Unified Pod (FOUP). A FOUP is assigned to each job and is used to move the job throughout the wafer fab after th...

Electromagnetic radiation ranging in frequency from a few MHz to tens of GHz has been used to volumetrically heat silicon above 1000°C in only a few seconds. Typical power is <1.5 kW. This technique has successfully produced direct Si wafer-to-wafer bonds in only five minutes without the use of any intermediate glue layer. Infrared images indicate void free bonds, and knife-edge tests could not...

1.1.3 Chemical and physical properties of the pure substance (a) Description: Grey, cubic crystals (Lide, 2003) (b) Melting-point: 1238 °C (Lide, 2003) (c) Density: 5.3176 g/cm (Lide, 2003) (d) Solubility: Insoluble in water (Wafer Technology Ltd, 1997); slightly soluble in 0.1 M phosphate buffer at pH 7.4 (Webb et al., 1984) (e) Stability: Decomposes with evolution of arsenic vapour at tempera...