نتایج جستجو برای: vapour phase epitaxial growth
تعداد نتایج: 1389056 فیلتر نتایج به سال:
Articles you may be interested in Plasmon resonance enhancement of Faraday rotation of liquid phase epitaxy grown garnet films populated with gold nanoparticles on the film surfaces Comment on " The role of Bi3+ ions in magneto-optic Ce and Bi comodified epitaxial iron garnet films " [Appl. Development of liquid phase epitaxy-grown (Bi, Gd, Lu)-substituted thin-film iron garnets Growth effects ...
Previously we have described the deposition of vertically aligned wurtzite CdTe nanowires derived from an unusual catalytically driven growth mode. This growth mode could only proceed when the surface of the substrate was corrupted with an alcohol layer, although the role of the corruption was not fully understood. Here, we present a study detailing the remarkable role that this substrate surfa...
A dual-timescale model of stressed solid-phase epitaxial growth is developed to provide a basis for the atomistic interpretation of experiments where the macroscopic growth velocity of (0 0 1) Si was studied as a function of uniaxial stress applied in the plane of the growth interface. The model builds upon prior empirical modeling, but is a significant improvement as it provides solid physical...
We have grown epitaxial films a few atomic layers thick of iron oxides on ruthenium. We characterize the growth by low energy electron microscopy. Using selected-area diffraction and intensity-versus-voltage spectroscopy, we detect two distinct phases which are assigned as wüstite and magnetite. Spin-polarized low energy electron microscopy reveals magnetic domain patterns in the magnetite phas...
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We report on the epitaxial growth of crystalline silicon films on (100) oriented crystalline silicon substrates by standard plasma enhanced chemical vapor deposition at 175 °C. Such unexpected epitaxial growth is discussed in the context of deposition processes of silicon thin films, based on silicon radicals and nanocrystals. Our results are supported by previous studies on plasma synthesis of...
The aim of this paper is to consider optical and electrical properties of MOVPE GaN homostruture LEDs. The sample that has been selected for the study, doped with Si and Mg for n and p region of junction, respectively. The V-I and L-I characteristics of this device indicate that diffusion and space charge currents have the main role in luminescence, because in this current range defects levels ...
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