Perovskite thin films with various functional properties have been synthesized through the Metal Organic Chemical Vapour Deposition (MOCVD). The MOCVD processes, used for the fabrication of a variety of advanced materials in thin film form, rely upon application of a molten multi-element source. The challenging in-situ strategy involves the use of a molten source consisting of a second-generati...

Submonolayer epitaxy in the presence of defect sites on the substrate is studied by means of a level-set method. Here, island nucleations occur by the creation of dimers and defect-monomer pairs. We present results for the scaled island size distribution (ISD) for growth with different densities for both random and regularly positioned defects. The dynamics show that for large D/F and defect de...

In the past 20 years the semiconductor laser has become a key device in optical electronics because of its pure output spectrum and high quantum efficiency. As the capabilities of laser diodes have grown, so has the range of applications contemplated for them. A great success in semiconductor lasers has been brought by the ability to artificially structure new materials on an atomic scale by us...

Recent theoretical work for Ga1−xMnxN predicts ferromagnetism in this materials system with Curie temperatures above room temperature. Ferromagnetic behavior observed in Ga1−xMnxN is still controversial, as there are conflicting experimental reports owing to the disparity in c

This work reports the photoluminescence (PL) study of vanadium-doped GaN (GaN: V) in the 9–300 K range. Samples have been successfully prepared on sapphire substrates by metalorganic vapour phase epitaxy technique (MOVPE). At room temperature (RT) the PL spectra of GaN: V are dominated by a blue band (BB) in the 2.6 eV range. This BB emission is very strong and its intensity increases with incr...

Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) technique. Photoluminescence in combination with photomodulated reflectance spectroscopy were used as the main characterisation methods for the growth optimisation. Results show that photoreflectance spectroscopy is an excellent tool for characterisation...

Chirality-controlled synthesis of single-wall carbon nanotubes with predefined chiralities has been an important but elusive goal for almost two decades. Here we demonstrate a general strategy for producing carbon nanotubes with predefined chiralities by using purified single-chirality nanotubes as seeds for subsequent metal catalyst free growth, resembling vapour-phase epitaxy commonly used fo...

Single-crystalline InN nanorods were successfully grown on c-Al2O3, GaN, Si(111), and Si(100) substrates by non-catalytic, template-free hydride metal–organic vapour phase epitaxy (H-MOVPE). It was evaluated thermodynamically and confirmed experimentally that the domain of nanorod growth lies in the vicinity of the growth–etch transition. Stable gas phase oligomer formation is suggested as the ...

InMnAs grown by MOVPE is a room temperature ferromagnetic semiconductor with a Tc of 330 K. The origin of the ferromagnetism and the interactions between itinerant carriers and localized spins in these structures are open questions. To address these questions, the carrier and spin life time in these structures were probed in mid-infrared region. The approach in this work was focused on the time...