Today’s data-dominated multimedia and low-power applications require more memory than ever. On-chip SRAM memories begin to dominate the chip area and have become the focus of technology scaling. However, the physical limitations of the technology scaling jeopardise the further progress of microelectronics as scaling results in devices that start to leak and that become less predictable. Closely...

Radio frequency (RF) high-power bipolar transistors are often constructed with the collector accessible at the bottom of the device. Characterization is carried out on substrate mounted devices. The classical methods developed for the “on wafer” capacitance–voltage (CV) and alternating current (ac) measurement of grounded devices are then no longer applicable. A (general) deembedding algorithm ...

Under the usual conditions of operation the MOS transistor operates in saturation and is a square-law device: the characteristic curve of the drain current as a function ofthe gate voltage is parabolic in shape (see the preceding article [11, fig. 2b). However, if the MOS transistor is biased to bring the operating point on to the slope of the parabola, then the amplification will be practicall...

This paper presents a scaleable model generation methodology of bipolar transistors. Although the methodology has been targeted towards the compact model HICUM, it can also be applied to an appropriate subcircuit extension of the conventional SPICE Gummel-Poon model (SGPM), thereby allowing its usage in any environment. The methodology enables a generation of extensive model libraries containin...

With isolated binocular targets, the best depth discrimination is found in the fixation plane (Blakemore, C., Journal of Physiology 211 (1970) 599). More recent studies have suggested that stereoscopic thresholds are not always a simple function of absolute disparity, but depend on the relative disparities in the stimulus. Here, we explored the effects of relative disparity in more detail, taki...