The homoepitaxy of Si is particularly interesting for the purpose kerfless wafer production, example in photovoltaic domain. Substrate surface engineering a key step prior to epitaxial growth, which will affect quality layer and its detachment transfer. In this work, we propose two plasma-based methods including deposition bilayer homoepitaxial interface SiGe heteroepitaxial interface. Their im...

Abstract Interface induced diffusion had been identified in a thin film system damaged by electron bombardment. This new phenomenon was observed Al 2 O 3 (some nm thick)/Si substrate system, which subjected to low energy (5 keV) bombardment producing defects the layer. The produced partially relaxed. rate of relaxation is, however, different vicinity interface and "bulk" parts difference create...

By means of electrochemical vapour deposition (E VD), it is possible to grow thin (0.5-j pm), dense airconia/yttria layers on porous ceramic substrates. Kinetics of the EVD process, morphology and oxygen permeation properties of the grown layers are investigated. Very thin (0,.5 t-an) layers are grown at relatively low temperatures (700 SOO’C). Water vapour as reactant enhances the surface reac...

The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes have to climb over the energy barrier generated at the p-AlGaN/p-GaN interface before entering the quantum wells. In this work, to address this problem, we report the enhancemen...

In this work, we used the depth resolution function (DRF) of the secondary ion mass spectrometry (SIMS) to deconvolve the boron depth profile of nanometer-thin embedded diamond layers. Thanks to an isotopic change within a thin layer, where carbon-12 (C) and carbon-13 (C) are substituted, the DRF was evaluated by a self-consistent algorithm. In a second step, this DRF was used to deconvolve the...

The van der Waals forces across a very thin liquid layer (nanofilm) in contact with a plane solid wall make the liquid nonhomogeneous. The dynamics of such flat liquid nanofilms is studied in isothermal case. The Navier-Stokes equations are unable to describe fluid motions in very thin films. The notion of surface free energy of a sharp interface separating gas and liquid layer is disqualified....

In this work, a more accurate prediction of liquid evaporation flux has been achieved. The statistical rate theory approach, which is recently introduced by Ward and Fang and exact estimation of vapor pressure in the layer adjacent to the liquid–vapor interface have  been used for prediction of this flux. Firstly, the existence of an equilibrium layer adjacent to the liquid-vapor interface ...

High quality factor (Q approximately 3.4 x 10(6)) microdisk resonators are demonstrated in a Si(3)N(4) on SiO(2) platform at 652-660 nm with integrated in-plane coupling waveguides. Critical coupling to several radial modes is demonstrated using a rib-like structure with a thin Si(3)N(4) layer at the air-substrate interface to improve the coupling.

Nucleation and interface propagation criteria are derived with account for temperature variation in the course of phase transition (PT) and internal variables. A model problem concerning the nucleation of thin inclined infinite layer in a rigid-plastic half-space under prescribed normal and shear stresses is solved. Nontrivial effect of shear stress on the PT pressure is shown.

Aqueous drops on silicone oil infused lubricating surfaces are cloaked with a thin layer of oil to minimize their surface energy. These oil cloaked aqueous drops exhibit pseudo-stable coalescence or spontaneous coalescence depending upon the lubricating oil thickness which controls the interaction point of the drops. For thick oil films, drops interact with each other through the surrounding oi...