A low resistance Ohmic contact to p-type GaN is essential for reliable operation of electronic and optoelectronic devices. Such contacts have been made using Ni/Au and Pd / Au contacts to p-type Mg-doped GaN (1.41x10 cm) grown by metalorganic chemical vapor deposition ( MOCVD ) on ( 0001 ) sapphire substrates. Thermal evaporation was used for the deposition of those metals followed by annealing...

We report a comparative spectroscopic study on the thin films of epitaxial aluminum nitride (AlN) basal plane sapphire (Al2O3) substrates grown in hydrogen (H2) and nitrogen (N2) gas reaction environments. AlN similar thicknesses (~3.0 µm) were by metal-organic chemical vapor deposition (MOCVD) for comparison. The impact environment epilayers was characterized using high-resolution X-ray diffra...

• MOCVD growth of InAs/InAsSb Type-II superlattice on Si substrates. IMF was utilized between GaAs and GaSb to overcome the mismatch. Photoluminescent characteristics comparable equivalent MBE grown results. The GaSb/GaAs/Si buffer layer structure demonstrated for T2SL. In this work we report type-II (T2SL) onto substrates via use a all by MOCVD. Transmission electron microscopy (TEM) used show...

A growth model for the low pressure chemical vapor deposition (LPCVD) of polycrystalline ZnO thin films is proposed. This model is based on experimental observations of the surfacemorphology and crystallographic orientations of the layers at different thicknesses and growth temperatures. It is shown that the films preferred orientation evolves from c-axis to aaxis as the growth temperature is i...

Due to their polymorphism, TiO2 films are quintessential components of state-of-the-art functional materials and devices for various applications from dynamic random access memory solar water splitting. However, contrary other semiconductors/dielectric materials, the relationship between structural/morphological electrical properties at nano microscales remains unclear. In this context, morphol...

InGaN/GaN multi-quantum wells (MQWs) are grown on (0001) sapphire substrates by metal organic chemical vapor deposition (MOCVD) with special growth parameters to form V-shaped pits simultaneously. Measurements by atomic force microscopy (AFM) and transmission electron microscopy (TEM) demonstrate the formation of MQWs on both (0001) and ([Formula: see text]) side surface of the V-shaped pits. T...

High-performance continuous-wave (CW) vertical-cavity surface-emitting lasers (VCSELs) rely on efficient thermal management for which top-emitting 930 nm thin-film VCSELs are integrated with a copper-plated heatsink by using double-transfer technique, exhibiting the low-power consumption, high-power, and temperature-stable VCSEL operation. In this study, structures, including highly n-doped GaA...

Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides (i.e., MoS2). Among ternary metal-oxy-chalcogenides, especially Bi2O2Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for that reported so far is a powder sublimation based c...