In this work, rapid thermal annealing was performed on InGaAs/GaAs quantum dot infrared photodetectors QDIPs at different temperatures. The photoluminescence showed a blueshifted spectrum in comparison with the as-grown sample when the annealing temperature was higher than 700 °C, as a result of thermal interdiffusion of the quantum dots QDs . Correspondingly, the spectral response from the ann...

Surfactant or block copolymer-templated mesoporous films have been extensively explored, but achieving mesostructure coherence and unidirectional orientation over macroscopic dimensions has remained quite challenging for these self-assembled systems. Here, we extend the concepts associated with zone refinement of crystalline materials to soft templated mesoporous carbon films based on the coope...

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The characteristics of multi-layered InAs/GaAs self assembled quantum dots (SAQDs) annealed after the growth were here studied using a combination of capacitance-voltage (C-V) measurements, Raman scattering and photoluminescence (PL) spectroscopy. The combination of the results obtained with the three techniques, gave evidences that the annealing at 500oC causes the sharpness of the SAQDs inter...

We show that the method we have developed for measuring the singlet exciton diffusion length in blends with [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) can be applied not only to polymeric materials, but also to small molecule organic semiconductors. Small organic molecules have a large potential for molecular re-organization upon thermal annealing. Here we show that the exciton diffusi...

Large grain polycrystalline silicon wafers have been subjected to post~annealing (900 °C/45 ruin) after POCI3 pre-diffusion at different temperatures. For the first time we have investigated the effect of the furnace starting and quenching temperature on the gettering efficiency. The optimisation of thermal cycle parameters include the determination of the best combination of starting temperatu...

High performance ambipolar silicon nanowire (SiNW) transistors were fabricated. SiNWs with uniform oxide sheath thicknesses of 6–7 nm were synthesized via a gas-flow-controlled thermal evaporation method. Field effect transistors (FETs) were fabricated using as-grown SiNWs. A two step annealing process was used to control contacts between SiNW and metal source and drain in order to enhance devi...