A simple, efficient CAD-oriented equivalent circuit modeling approach of frequency-dependent behavior of substrate noise coupling is presented. It is shown that the substrate exhibits significant frequency-dependent characteristics for high frequency applications using epitaxial layers on a highly doped substrate. Using the proposed modeling approach, circuit topographies consisting of only ide...

We have investigated the influence of the thickness of an undoped spacer layer under the channel on the current–voltage characteristics of GaAs MESFETs. To that purpose we have grown the active layers of the MESFETs on top of a 50 nm AlAs layer to separate the device effectively from the undoped GaAs substrate. Substrate leakage currents are of the order of 10−7 A at 30 V source–substrate bias....

We study the steady state fluctuations of an Edwards-Wilkinson type surface with the substrate taken to be a sphere. We show that the height fluctuations on circles at a given latitude has the effective action of a perfect Gaussian 1/f noise, just as in the case of fixed radius circles on an infinite planar substrate. The effective surface tension, which is the overall coefficient of the action...

Industry trends aimed at integrating higher levels of circuit functionality have triggered a proliferation of mixed analog-digital systems. Magniied noise coupling through the common chip substrate has made the design and veriication of such systems an increasingly diicult task. In this paper we present a fast eigendecomposition technique that accelerates operator application in BEM methods and...

Chaotic internal degrees of freedom of a molecule can act as noise and affect the diffusion of the molecule on a substrate. A separation of timescales between the fast internal dynamics and the slow motion of the centre of mass on the substrate makes it possible to directly link chaos to diffusion. We discuss the conditions under which this is possible, and show that in simple atomistic models ...

We investigate p-type GaN : Mg materials using noise spectroscopy. The epitaxial Mg-doped GaN layers were grown on a sapphire substrate by metalorganic chemical vapour deposition. Significant generation–recombination noise is observed and shown to be linked to metastable DX-like centres. We correlate these centres with metastable defects with optical ionization energies 1.1 eV and 1.9 eV, respe...

We study the transport properties of two double quantum dots in a parallel arrangement at temperatures of a few kelvin. Thereby, we show that decoherence entailed by the substrate phonons affects the shot noise. For asymmetric coupling between the dots and the respective lead, the current noise is sub-Poissonian for resonant tunneling, but super-Poissonian in the vicinity of the resonances. Our...

General conditions for minimizing the noise figure of any linear two-port are reviewed before considering the specific case of a MOSFET low-noise amplifier (LNA). It is shown that the minimum noise figure cannot be obtained over an arbitrarily large bandwidth with networks of low order. For narrowband operation, however, one may construct simple amplifiers whose noise figure and power gain are ...