A key challenge for silicon photonic systems is the development of compact on-chip light sources. Thulium-doped fiber and waveguide lasers have recently generated interest for their highly efficient emission around 1.8 μm, a wavelength range also of growing interest to silicon-chip based systems. Here, we report on highly compact and low-threshold thulium-doped microcavity lasers integrated wit...

Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regi...

An AlGe eutectic wafer level bonding process is presented and characterized for heterogeneous integration of silicon photonics, CMOS integrated electronic circuits and active III-V components. Heterogeneous Integration of Photonics and CMOS The technology of silicon photonics integrated circuits (SiPIC) currently finds itself transitioning from research to industrial scale production [1]. The p...

in this paper, we propose to optimize manufacturing methods of memory cells by produced silicon nanoparticles via electrical spark discharge of silicon electrodes in water to reduce the energy consumption for low power applications. the pulsed spark discharge with the peak current of 60 a and a duration of a single discharge pulse of 60 µs was used in our experiment. the structure, morphology, ...

Novel nanostructured materials, such as aluminum oxide (AlOOH), silicon oxide (SiO2) or zirconium oxide (ZrO2) embedded into PVA, were investigated as potential matrices to incorporate organometallic compounds (OMCs) for the development of optical oxygen-sensitive sensors which make use of the principle of luminescence quenching.

High-performance and low-temperature-compatible solid phase crystallized polycrystalline silicon thin film transistors using thermal oxide buffered aluminum oxide (Al2O3) as gate dielectric are demonstrated. By growing a thermal oxide buffer layer using two-step annealing method, the interface quality is greatly improved, resulting in excellent device performance.

Thin oxide interlayers are commonly added to the back reflector of thin-film silicon solar cells to increase their current. To gain more insight in the enhancement mechanism, we tested different back reflector designs consisting of aluminium-doped zinc oxide (ZnO:Al) and/or hydrogenated silicon oxide (SiOx:H) interlayers with different metals (silver, aluminium, and chromium) in standard p-i-n ...

Ion implantation was used to incorporate deuterium at the Si–SiO2 interface. Polycrystalline silicon gate metal-oxide-semiconductor diodes with 4 nm oxide grown on deuterium-implanted p-type ^100& silicon substrate were investigated. It was observed that deuterium implantation at a light dose of 1310/cm at 25 keV reduced oxide leakage current due to reduction in oxide charge and interface traps...

We report a method for stress measurement and analysis in silicon oxide thin films using optical interference. Effects of design and fabrication on stress have been studied by fabricating submicron-thick slabs of oxide anchored at one end and extending over a reflective surface. Optical interference occurs between reflections from the surface and the oxide slab, giving rise to light and dark fr...

The front transparent conductive oxide layer is a source of significant optical and electrical losses in silicon heterojunction solar cells because of the trade-off between free-carrier absorption and sheet resistance. We demonstrate that hydrogen-doped indium oxide (IO:H), which has an electron mobility of over 100 cm/V s, reduces these losses compared to traditional, low-mobility transparent ...