نتایج جستجو برای: silicon nanowires

تعداد نتایج: 93681  

Journal: :Physical review letters 2007
Mauro Bruno Maurizia Palummo Andrea Marini Rodolfo Del Sole Stefano Ossicini

We show that the electronic and optical properties of silicon nanowires, with different size and orientation, are dominated by important many-body effects. The electronic and excitonic gaps, calculated within first principles, agree with the available experimental data. Huge excitonic effects, which depend strongly on wire orientation and size, characterize the optical spectra. Modeling porous ...

Journal: :ACS nano 2010
Candace K Chan Reken N Patel Michael J O'Connell Brian A Korgel Yi Cui

Composite electrodes composed of silicon nanowires synthesized using the supercritical fluid-liquid-solid (SFLS) method mixed with amorphous carbon or carbon nanotubes were evaluated as Li-ion battery anodes. Carbon coating of the silicon nanowires using the pyrolysis of sugar was found to be crucial for making good electronic contact to the material. Using multiwalled carbon nanotubes as the c...

Journal: :Physical review letters 2008
Zhigang Wu J B Neaton Jeffrey C Grossman

Using ab initio calculations, structural tapering of silicon nanowires is shown to have a profound effect on their electronic properties. In particular, the electronic structure of small-diameter tapered silicon nanowires is found to have a strong axial dependence, with unoccupied eigenstates being substantially more sensitive to diameter. Moreover, the states corresponding to the highest occup...

Journal: :Nanotechnology 2010
Johannes de Boor Nadine Geyer Jörg V Wittemann Ulrich Gösele Volker Schmidt

By combining laser interference lithography and metal-assisted etching we were able to produce arrays of silicon nanowires with uniform diameters as small as 65 nm and densities exceeding 2 x 10(7) mm(-2). The wires are single crystalline, vertically aligned, arranged in a square pattern and obey strict periodicity over several cm(2). The applied technique allows for a tailoring of nanowire siz...

2017
Ievgen Kurylo Abderrahmane Hamdi Ahmed Addad Rabah Boukherroub Yannick Coffinier

We created different TiO₂-based coatings on silicon nanowires (SiNWs) by using either thermal metallization or atomic layer deposition (ALD). The fabricated surfaces were characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), and reflectivity measurements. Surfaces with different TiO₂ based coating thicknesses were then used for phosphopeptide enric...

2006
G Bilalbegović

Thin nanowires of silicon oxide were studied by pseudopotential density functional electronic structure calculations using the generalized gradient approximation. Infinite linear and zigzag Si-O chains were investigated. A wire composed of three-dimensional periodically repeated Si4O8 units was also optimized, but this structure was found to be of limited stability. The geometry, electronic str...

Journal: :Microscopy research and technique 2004
David C Bell Yue Wu Carl J Barrelet Silvija Gradecak Jie Xiang Brian P Timko Charles M Lieber

We used vapor-liquid-solid (VLS) methods to synthesize discrete single-element semiconductor nanowires and multicomposition nanowire heterostructures, and then characterized their structure and composition using high-resolution electron microscopy (HRTEM) and analytical electron microscopy techniques. Imaging nanowires requires the modification of the established HRTEM imaging procedures for bu...

Journal: :ACS nano 2011
Massimo Mongillo Panayotis Spathis Georgios Katsaros Pascal Gentile Marc Sanquer Silvano De Franceschi

We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes, and each contact was selectively silicided by means of the Joule effect. By a real-time monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nick...

2014
Shaoyuan Li Wenhui Ma Yang Zhou Xiuhua Chen Yongyin Xiao Mingyu Ma Wenjie Zhu Feng Wei

In this paper, the moderately and lightly doped porous silicon nanowires (PSiNWs) were fabricated by the 'one-pot procedure' metal-assisted chemical etching (MACE) method in the HF/H2O2/AgNO3 system at room temperature. The effects of H2O2 concentration on the nanostructure of silicon nanowires (SiNWs) were investigated. The experimental results indicate that porous structure can be introduced ...

Journal: :Nano letters 2005
Allon I Hochbaum Rong Fan Rongrui He Peidong Yang

Silicon nanowires were synthesized, in a controlled manner, for their practical integration into devices. Gold colloids were used for nanowire synthesis by the vapor-liquid-solid growth mechanism. Using SiCl4 as the precursor gas in a chemical vapor deposition system, nanowire arrays were grown vertically aligned with respect to the substrate. By manipulating the colloid deposition on the subst...

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