Atomically uniform silver films grown on highly doped n-type Si(111) substrates show fine-structured electronic fringes near the silicon valence band edge as observed by angle-resolved photoemission. No such fringes are observed for silver films grown on lightly doped n-type substrates or p-type substrates, although all cases exhibited the usual quantum-well states corresponding to electron con...

In this paper, we present the design and fabrication of hybrid dielectric-metallic back surface reflectors, for applications in thin film amorphous silicon solar cells. Standard multilayer distributed Bragg reflectors, require a large number of layers in order to achieve high reflectance characteristics. As it turns out, the addition of a metallic layer, to the base of such a multilayer mirror,...

A novel fabrication process is proposed for manufacturing thin-film metal Fresnel lenses for X-ray applications. This process combines diamond turning technology and photolithographic processes. To prevent thin-film lens substrates from deflection during diamond turning, films were prepared on single crystalline silicon wafers by electrolytic plating. After the Fresnel lens structure is generat...

2014 Gold films deposited at room temperatures on Si are analysed by Auger and electron energy loss spectroscopies which reveal the existence of : 1) a diffuse interface ; 2) a pure gold film; 3) a mixed gold-silicon layer on top of the film. Loss spectra display gold d band features related to electronic properties of gold-silicon alloys. An estimation of the composition in the monolayer range...

The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford backscattering spectrometry, transmission electron microscopy and Raman scattering. The optic...

The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of microand nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO2-Si interface and SiO2-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence ...

The early stages of thin film growth from the rf glow discharge of silane-based gas mixtures have been systematically studied by structural characterizations of the silicon based multilayers. The x-ray diffraction, its rocking curve and x-ray interference of hydrogenated amorphous silicon(a-Si:H, 10 % 200 A thick)/stoichiometric silicon nitride (a-SigNq:H, 25 % 250 A) multiple layers have been ...