Title of dissertation: ELECTRON TRANSPORT SIMULATIONS AND BAND STRUCTURE CALCULATIONS OF NEW MATERIALS FOR ELECTRONICS: SILICON CARBIDE AND CARBON NANOTUBES. Gary Pennington, Doctor of Philosophy, 2003 Dissertation directed by: Professor Neil Goldsman Department of Electrical Engineering Silicon carbide (SiC) and carbon nanotubes (CNTs) are two materials which have promising potential in electr...

Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals Role of oxygen on microstructure and thermoelectric properties of silicon nanocomposites Spectrally and temporarily resolved luminescence study of short-range order in nanostructured amorphous ZrO2 Characterization of luminescent silicon carbide nanocrystals prepared by reactive bonding and subsequent wet chemica...

The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that o...

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Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications. Although, SiC can be machined in ductile regime at nanoscale through single-point diamond turning process, the root cause of the ductile response of SiC has not been u...

Silicon carbide (SiC) has emerged as a promising material platform for quantum photonics and nonlinear optics. These properties make the development of integrated photonic components in high-quality SiC critical aspect advancement scalable on-chip networks. In this work, we numerically design, fabricate, demonstrate performance monolithic metalenses from suitable optical operations. We engineer...