Background and objective: The use of fractional exhaled nitric oxide (FeNO) concentration has been proposed as a surrogate marker for monitoring airway response to specifi c inhalation challenge (SIC). We investigated the usefulness of FeNO measurements for monitoring airway response to SIC with occupational agents. Material and methods: Workers with suspected occupational asthma were recruited...

Silicon carbide (SiC), a compound of silicon and carbon, with chemical formula SiC, the beta modification ( β-SiC), with a zinc blende crystal structure (similar to diamond), is formed at temperature below 1700°C. β-SiC will be the most suitable ceramic material for the future hard tissue replacement, such as bone and tooth. The in vitro cytotoxicity of β-SiC nanowires was investigated for the ...

abstract: in this study, al 2 o 3 –sic nanocomposites have been fabricated by mixing of alumina powder containing 0.05% weight magnesium oxide and silicon carbide nano powders, followed by hot pressing at 1650 0 c. the mechanical properties of al 2 o 3 -sic nanocomposites containing different volume fraction (2.5, 5, 7.5, 10 and 15%) of nano scale sic particles were investigated and compared wi...

The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles, especially hybrid electric vehicles (HEVs). The system-level benefits of using SiC devices in HEVs include a large reduction in the size, weight, and cost of the power conditioning and/or thermal systems. However, the expecte...

Abstract This study emphasis on a novel fabrication technique to fabricate hybrid cermets using Al 6061 alloy with nano sized SiC, 2 O 3 and TiO as reinforcements. During the process, melted pool was ultrasonicated disperse nanoparticles at 20 kHz for 5 min pressure of 50 MPa applied eliminate voids. The influence physical, thermal mechanical properties were evaluated by tensile, wear studies. ...

The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). SSRM measurements on p-type 4H-SiC areas selectively exposed to N2O at 1150 °C showed an increased resistance compared to the unexpo...

In this research the influence of adding SiC on microstructure and electrical properties of ZnO-based Nanocomposite varistors were investigated. SiC was added with amounts of 10-0 mass% to ZnO-based varistor composition. It is found that SiC allows reaching to high threshold voltage with formation of fine-graine...

This paper describes the results of an exploratory study of blanket concepts based on SiC/SiC structure and LiPb breeder. An assessment of the performance of these concepts for advanced power plant application i s presented, key issues are identified, and constraints relating to the SiC/SiC properties are discussed.

Single-shot nanosecond risetime pulse testing of SiC devices is demonstrated to reveal unique and highly crucial device performance information not obtainable by conventional DC and RF electrical testing. This paper describes some strikingly important device behaviors observed during pulse-testing experiments of 4H-SiC pn junction diodes. Specific observations include: 1) a remarkably fast and ...