PN junctions in nanoscale materials are of interest for a range of technologies including photodetectors, solar cells and light-emitting diodes. However, Schottky barriers at the interface between metal contacts and the nanomaterial are often unavoidable. The effect of metalsemiconductor interfaces on the behavior of nanoscale diodes must be understood, both to extract the characteristics of th...

Schottky diode properties of semitransparent Ag(4 nm)/Au(4 nm) metal stack on In0.2Ga0.8N were investigated and defect characterization was performed using capacitance deep level transient (DLTS) and optical spectroscopy (DLOS). DLTS measurements made on the In0.2Ga0.8N Schottky diodes, which displayed a barrier height of 0.66 eV, revealed the presence of two deep levels located at Ec-0.39 eV a...

Pt/AlGaN/AlN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and ...

Schottky diodes may be realized by various techniques, depending on application and processing technology. M/ACOM has recently developed an enhancement/depletion (E/D) pHEMT process, used primarily for control circuits around its mature RF circuitry. We report here a reliability study of two diodes (configured using E-FETs), subjected to both high temperature and forward bias accelerated stress...

We present a 144-element terahertz quasi-optical grid frequency doubler. The grid is a planar structure with bowtie antennas as a unit cell, each loaded with a planar Schottky diode. The maximum output power measured for this grid is 24 mW at 1 THz for 3.1s 500-GHz input pulses with a peak input power of 47 W. An efficiency of 0.17% for an input power of 6.3 W and output power of 10.8 mW is mea...

Planar GaAs Schottky diode based multiplier chains driven by HEMT power amplifiers have now demonstrated useful power beyond the 1 THz range. This paper will briefly review the state-of-the-art in planar Schottky diode multiplier chains for coherent detection. Future challenges and promising emerging technologies will also be outlined.

A receiver belonging to the family of integrated planar receivers has been developed at 90 GHz. It consists of a planar Schottky-diode placed at the feed of a dipole-probe suspended inside an integrated horn antenna. The measured planar mixer single-sideband conversion loss at 91.2 GHz (LO) with a 200 MHz IF frequency is S.3dB±0.3dB. The low cost of fabrication and simplicity of this design mak...

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Abstract—In this paper, the design and development of a novel active antenna including circuits for Ultra-wide band (UWB) pulse generation and transmission have been described. In this design a pulse with pulse-width approximately 150 ps and amplitude 500 mV (peak-topeak) was generated using a single high electron mobility transistor (HEMT) as the active device (and an optional Schottky diode f...

Article history: Received 9 December 2009 Received in revised form 22 March 2010 Accepted 22 March 2010 Here we propose a design for a novel broadband silicon electro-optic absorption modulator. The device is simply a 100 μm long silicon waveguide with a Schottky diode integrated in it. Modulation is achieved through free-carrier absorption, not interference effects, enabling operation over the...