Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufa...

In this article, based on electronic structure calculations, the conditions are discussed under which a genuine half-metallic interface between a heusler C1b half-metal and a semiconductor can exist. An explanation is given why for the III–V semiconductors the double anion terminated (111) interface is the only possible interface. For semiconductors, based on transition metals, a much wider var...

Interest in organic semiconductors is motivated by their promise to offer a viable route to fabricating low-cost electronic devices on arbitrary substrates, and by the versatility of their chemical structures and physical properties, accomplished by means of molecular engineering. [ 1–3 ] Molecular modifi cations can yield soluble semiconductors that allow reduced complexity device fabrication ...

In this paper a theory developed by Stumpf [1] will be used in order to calculate Auger transi­ tion probabilities in semiconductors. The main feature of the calculations is the incorporation of the coupling of impurity electrons to the surrounding lattice by phonons, using dynamical elec­ tronic wave functions for impurity states. The final result is an expression for transition probabi­ litie...

In quantum mechanics, any quantum state ‘vector’ | i may be expanded as a linear superposition of the eigenvectors of any Hermitian operator | i = P n an|ni. This is the Expansion Principle of quantum mechanics. For most problems, the Hermitian operator of choice is the Hamiltonian operator Ĥ = (p̂/2m0) + V (r), but it need not be. We choose the Hamiltonian operator since there exist a few probl...

Matthew D. McCluskey, Marianne C. Tarun and Samuel T. Teklemichael Journal of Materials Research / Volume 27 / Issue 17 / 2012, pp 2190 ­ 2198 DOI: 10.1557/jmr.2012.137 Link to this article: http://journals.cambridge.org/abstract_S0884291412001379 How to cite this article: Matthew D. McCluskey, Marianne C. Tarun and Samuel T. Teklemichael (2012). Hydrogen in oxide semiconductors. Journal of Mat...

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The search for semiconductors that can be solutionprocessed into thin-film form at low temperature, while simultaneously providing quality device characteristics, represents a significant challenge for materials chemists. Continuous thin films with field-effect mobilities of 10 cm V s or greater are particularly desirable for high-speed microelectronic applications. Attainment of this goal shou...

We consider the electronic transport in bounded semiconductors in the presence of an external magnetic field. Taking into account appropriate boundary conditions for the current density at the contacts, a change in the magnetoresistance of bulk semiconductors is found as compared with the usual theory of galvanomagnetic effects in boundless media. New mechanism in magnetoresistance connected wi...