Enhanced electrooptic coefficient of GaInAsP three-step quantum wells (3SQW) for high power electrorefraction modulator applications is reported. Measured electrooptic coefficient of the 3SQW is nearly three times higher than the conventional rectangular quantum well (RQW) at λ=1.55 μm. Higher electrooptic effect, combined with a low optical absorption coefficient α<1 cm in the 3SQW increased t...

Semiconductor lasers with InGaAsP/InP nonidentical multiple quantum wells (MQWs) for optical communication are experimented to show the improved temperature characteiistics. With proper layout of the nonidentical MQWs, the characteristic temperature ofthe laser diodes is increased. Also, the differential quantum efficiency increases to around 40% for the temperature increasing from 30°C to 4OUC...

We introduce, analyze, and experimentally demonstrate a compact semiconductor-based scheme for a femtosecond-scale partial fourth-order coherence g((4)) measurements. The scheme is based on a start-stop photon-counting Hanbury Brown and Twiss (HBT) interferometry of an upconversion-based Michelson-interferometer autocorrelation. The experimental realization employs second-harmonic generation in...

In the past 20 years the semiconductor laser has become a key device in optical electronics because of its pure output spectrum and high quantum efficiency. As the capabilities of laser diodes have grown, so has the range of applications contemplated for them. A great success in semiconductor lasers has been brought by the ability to artificially structure new materials on an atomic scale by us...

An 8ch, 400 GHz monolithically integrated WDM channel selector featuring an array of quantum well semiconductor optical amplifiers (SOA) and arrayed waveguidegrating demultiplexer is presented. Reduction of fabrication complexity was achieved by using a single step selective area MOVPE to realize the different bandgap profiles for the SOA array and passive region. The selective growth mask dime...

We analyze here a model for single-electron charging in semiconductor quantum dots that includes the standard Anderson on-site repulsion (U) as well as the spin-exchange (Jd) that is inherently present among the electrons occupying the various quantum levels of the dot. We show explicitly that for ferromagnetic coupling (Jd > 0), an s-d exchange for an S=1 Kondo problem is recovered. In contras...

We demonstrate epitaxially grown semiconductor membrane quantum well lasers on a SiO 2 /Si substrate lasing in waveguide configuration, for potential uses as coherent light sources compatible with photonic integrated circuits. study the emission characteristics of In 0.13 Ga 0.87 As/GaAs 0.94 P 0.06 lasers, by using real and reciprocal space imaging. The laser cavity length is 424 μm, it emits ...