Combinatorial methodology enables the generation of comprehensive and consistent data sets, compared with the “one-composition-at-a-time” approach. We demonstrate, for the first time, the combinatorial methodology applied to the work function (Φm) extraction for Ta1−xAlxNy alloys as metal gates on HfO2, for complementary metal–oxide–semiconductor applications, by automated measurement of over 2...

The unique capacity of localized surface plasmon resonance (LSPR) offers a new opportunity to overcome the limited efficiency of semiconductor photocatalyst. Here we unravel that LSPR, which usually occurs in noble metal nanoparticles, can be realized by hydrogen doping in noble-metal-free semiconductor using TiO2 as a model photocatalyst. Moreover, its LSPR is located in infrared region, which...

We experimentally demonstrate the observation of a frequency-shift dynamics at temporal boundary in terahertz (THz) region relying on scheme that controls structural dispersion metal-semiconductor waveguide. Ultrafast structural-dispersion switching is achieved within subpicosecond timescale by illuminating waveguide surface with an optical pump pulse during propagation THz Owing to relatively ...

The improvement of the metal/InGaAs interface is essential for the future application of InGaAs metal source/drain Schottky-barrier metal-oxide-semiconductor field-effect-transistors. In this article, on In0.53Ga0.47As, the authors examine the recently proposed method of inserting an ultrathin insulator to modulate the effective Schottky-barrier height SBH at the metal/semiconductor interface. ...

The success of printing technology in the electronics industry primarily depends on the availability of metal printing ink. Various types of commercially available metal ink are widely used in different industries such as the solar cell, radio frequency identification (RFID) and light emitting diode (LED) industries, with limited usage in semiconductor packaging. The use of printed ink in semic...

A theory based on the Bardeen formalism is developed for computing the tunnel current between a metal tip and a semiconductor surface. Tip-induced band bending in the semiconductor is included, with the electrostatic potential computed in a fully threedimensional model whereas the tunnel current is computed in the limit of large tip radii. Localized states forming at the semiconductor surface a...

Nanoelectromechanical (NEM) switches are similar to conventional semiconductor switches in that they can be used as relays, transistors, logic devices and sensors. However, the operating principles of NEM switches and semiconductor switches are fundamentally different. These differences give NEM switches an advantage over semiconductor switches in some applications--for example, NEM switches pe...

thin film phthalocyanines(pc), incloding zinc, iron, and magnesium phthalocyani-nes, were prepared by vacuum deposition method. chronocoulometry was used to study the charge transfer reaction mechanism of ionic species through the thin films. the results obtained in chronocoulometric studies shows that the thin film phthalocyanines could operate via two mechanisms.the first mechanism metal pc t...