Two unidirectionally coupled external cavity semiconductor lasers showing chaotic intensity uctuations are studied by numerically solving the Lang-The systems are shown to synchronize when operating in the regime of low-frequency uctuations which is characterized by a very high-dimensional (d > 150) attractor. The innuence of parameter diierences between the two lasers on the synchronization qu...

Theoretical results concerning injection locking in complex cavity semiconductor lasers are reported. A general equation for the complex temporal envelope of the optical field is derived. The injection direction influence is taken into account and the difference between front and rear phase noise is pointed out and demonstrated. Numerical results are given concerning the feed-in rate of differe...

We study experimentally the dynamics of quantum-dot (QD) passively mode-locked semiconductor lasers under external optical injection. The lasers demonstrated multiple dynamical states, with bifurcation boundaries that depended upon the sign of detuning variation. The area of the hysteresis loops grew monotonically at small powers of optical injection and saturated at moderate powers. At high in...

A semiconductor laser is often considered as an optical gain medium inside a Fabry-Perot resonant cavity. Lasing emission into cavity modes requires that photons experience at least one round trip within the resonator. A natural question concerns the effect multiple round trips in the resonator (i.e., cavity formation) has on temporal evolution of lasing light intensity and spectra. Under norma...

In this letter, we make a prima facie case that there could be distinct advantages to exploiting a new class of finite flux equilibrium solutions of the Quantum Boltzmann equation in semiconductor lasers.

This paper examines the dynamical origin of low-frequency uctuations in semiconductor lasers subject to time-delayed optical feedback. In particular, we study chaotic transitions in these lasers by numerical integration of Lang-Kobayashi equations for the laser pumped near threshold. In order to classify these transitions we compute bifurcation diagrams in parameter regimes covering a wide rang...

We have demonstrated that a hybrid laser array, combining graded-photonic-heterostructure terahertz semiconductor lasers with a ring resonator, allows the relative phase (either symmetric or anti-symmetric) between the sources to be fixed by design. We have successfully phase-locked up to five separate lasers. Compared with a single device, we achieved a clear narrowing of the output beam profile.

We demonstrate that the self-mixing effect in terahertz frequency quantum cascade lasers can be used for three-dimensional coherent imaging; swept-frequency interferometry for imaging and materials analysis; and, high-resolution inverse synthetic aperture radar imaging. OCIS codes: (110.6795) Terahertz imaging; (140.5965) Semiconductor lasers, quantum cascade

We report on-chip InGaAs nanopillar lasers directly grown on silicon using a lowtemperature, CMOS-compatible MOCVD process. A novel whispering gallery and Fabry-Perot hybrid cavity mode provides optical feedback for laser oscillation in as-grown subwavelength nanopillars. ©2010 Optical Society of America OCIS codes: (140.5960) Semiconductor lasers; (230.3120) Integrated optics devices; (130.313...

We demonstrate the first electrically pumped quantum-dot micro-ring lasers epitaxially grown on (001) silicon. Continuous-wave lasing around 1.3 μm was achieved with ultra-low thresholds as small as 0.6 mA and maximum operation temperatures up to 100°C. OCIS codes: (230.5590) Quantum-well, -wire and -dot devices; (140.5960) Semiconductor lasers; (140.3948) Microcavity devices; (160.3130) Integr...