Abstract: The internal electric field of a 2D P-N junction semiconductor is mapped out by two techniques: measuring the deflection transmitted beam in micro-STEM mode with acquisition and data fitting an un-scattered image, through derivative electrostatic potential maps dual lens electron holography. Comparable results measured these techniques are reported.

Noise (a spontaneous fluctuation in current or in voltage) is generated in all semiconductor devices. The intensity of these fluctuations depends on device type, its manufacturing process, and operating conditions. The resulted noise, as a superposition of different noise sources, is defined as an inherent noise. The equivalent noise models (containing all noise sources) are created for a parti...