نتایج جستجو برای: semiconducting gallium arsenide
تعداد نتایج: 21601 فیلتر نتایج به سال:
We develop a theoretical formulation to calculate the absolute and differential transmission of a focused laser beam through a high-aperture optical system. The focused field interacts with a point dipole that is buried in a high-index material, and is situated at the Gaussian focus of the focusing and collection two-lens system. The derived expressions account for the vectorial nature of the f...
Abstract Ultrafast laser inscription (ULI) inside semiconductors offers new perspectives for 3D monolithic structures to be fabricated and functionalities added in electronic photonic microdevices. However, important challenges remain because of nonlinear effects such as strong plasma generation that distort the energy delivery at focal point when exposing these materials intense infrared light...
Modern microelectronics and nanoelectronics devices rely on the drift of electron localized at the interfaces between different materials, such silicon and silicon dioxide or gallium arsenide and aluminum gallium arsenide. Hence, the electron drift transit time in the active region of a device determines the maximum device speed. Instead of the electron drift, we propose to use the waves of the...
he dentin hypersensitivity is a painful condition rather prevalent in the general population. There are several ways of treatment for such condition, including the low intensity lasers. The proposal of this study was to verify the effectiveness of the Gallium-Aluminum-Arsenide diode laser in the treatment of this painful condition, using a placebo as control.Materials and methods: Thirty-two pa...
This study determined the effects of gallium-aluminum-arsenide laser (GaAlAs), gallium-arsenide laser (GaAs) and Dersani healing ointment on skin wounds in Wistar rats. The parameters analyzed were: type I and III collagen fiber concentrations as well as the rate of wound closure. Five wounds, 12 mm in diameter, were made on the animals' backs. The depth of the surgical incision was controlled ...
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