The performance and potential of a W-band radio-over-fiber link is analyzed, including a characterization of the wireless channel. The presented setup focuses on minimizing complexity in the radio frequency domain, using a passive radio frequency transmitter and a Schottky diode based envelope detector. Performance is experimentally validated with carriers at 75-87GHz over wireless distances of...

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We have investigated the spectral responsivity of porous silicon Schottky barrier photodetectors in the wavelength range 0.4-1.7 mum . The photodetectors show strong photoresponsivity in both the visible and the infrared bands, especially at 1.55 mum . The photocurrent can reach 1.8 mA at a reverse bias of 6 V under illumination by a 1.55-mum , 10-mW laser diode. The corresponding quantum effic...

This work presents the analysis of radiated EMI problems associated with DC-DC buck converters and the solutions for minimize the reverse recovery of the Drain-Bulk diode of the synchronous switching MOSFET. The DC-DC buck converter topology is used in computers and telecom applications because of its high power efficiency and multiple DC levels. For reducing the reverse recovery and its relate...

Traditionally, multiple IC chips are needed to build transmitters (Tx) used in wireless communications. The difficulty with a full Tx integration is that each Tx building block uses different technology. A power-detection circuit will exploit the Schottky diode, while the modulator IC is integrated with BiCMOS or SiGe. Likewise, the digital control loop is implemented in CMOS. Now that directco...

An open structure SIS receiver, used already for astronomy at 345 GHz was tested at 470 and 690 GHz. Receiver noise temperatures considerably better than those of standard systems based on Schottky diode mixers were accomplished. A specific merrit of this system is the option to change the range of input frequencies by simply mounting a specific mixer element in a standard mixer block and by ex...

We report an alignment-free gallium oxide (Ga2O3) heterojunction barrier Schottky (HJBS) power diode, which utilizes the self-assembled Ni nanostructures as in situ masks for trench etching of Ga2O3 and subsequent selective-area filling p-type NiO. By increasing depth to 200 nm, relevant HJBS diode exhibits improved reverse blocking capabilities including reduced leakage current density 10−8 A/...