Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current-voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The resul...

We report novel photovoltaic (PV) switching based on the low exciton-binding energy property of an organic heptazole (C26H16N2) thin film after fabrication of an heptazole-based Schottky diode. The Schottky diode cell displayed an instantaneous voltage of 0.3 V as an open circuit voltage (VOC) owing to the work function difference between the Schottky and ohmic electrode under deep blue illumin...

Dynamic characterization (Pulsed I-V) on Au-free AlGaN/GaN Schottky Barrier Diodes (SBDs) has been performed to evaluate the impact of negative quiescent bias on the forward characteristics. Results show an increase of on-resistance when more negative quiescent biases are applied, and a sudden current collapse phenomenon when the quiescent bias exceeds -175 V. Furthermore, the measurements show...

An analytical theory to describe the combined effects of the epitaxial layer thickness and the ohmic contact on the noise properties of Schottky barrier diodes is presented. The theory, which provides information on both the local and the global noise properties, takes into account the finite size of the epitaxial layer and the effects of the back ohmic contact, and applies to the whole range o...

Pt/AlGaN/AlN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and ...

Schottky diodes may be realized by various techniques, depending on application and processing technology. M/ACOM has recently developed an enhancement/depletion (E/D) pHEMT process, used primarily for control circuits around its mature RF circuitry. We report here a reliability study of two diodes (configured using E-FETs), subjected to both high temperature and forward bias accelerated stress...