Self-heating effects and temperature rise in AlGaN/GaN HEMTs grown on silicon and sapphire substrates are studied, exploiting transistor dc characterization methods. A negative differential output resistance is observed for high dissipated power levels. An analytical formula for a source-drain current drop as a function of parasitic source resistance and threshold voltage changes is proposed to...

GaN avalanche photodiodes APDs were grown on both conventional sapphire and low dislocation density free-standing FS c-plane GaN substrates. Leakage current, gain, and single photon detection efficiency SPDE of these APDs were compared. At a reverse-bias of 70 V, APDs grown on sapphire substrates exhibited a dark current density of 2.7 10−4 A /cm2 whereas APDs grown on FS-GaN substrates had a s...

The dynamics of melting-rapid solidification of amorphous Ge films on transparent substrates upon irradiation with nanosecond laser pulses has been analyzed by means of real time reflectivity measurements performed both at the air-film and film-substrate interfaces. The effect of the heat flow conditions on the rapid solidification process has been studied by comparing the behavior of films wit...

The separation of graphene grown on metallic catalyst by chemical vapor deposition (CVD) is essential for device applications. The transfer techniques of graphene from metallic catalyst to target substrate usually use the chemical etching method to dissolve the metallic catalyst. However, this causes not only high material cost but also environmental contamination in large-scale fabrication. We...

The growth of GaN bulk crystals via the HVPE process and the manufacturing of orientation controlled substrates from the GaN crystals are presented. An HVPE process has been produced for growth of bulk GaN on sapphire with an AlN interfacial seed layer. This process has allowed for the production of GaN substrates up to 2 inches in diameter. Due to the stress associated with the growth of GaN o...

Infrared-visible sum-frequency-generation spectroscopy (SFG) was used to study the molecular structure of water between a poly(dimethylsiloxane) (PDMS) and a sapphire substrate. The observation of SFG peaks associated with the dangling surface hydroxyl groups (3690 cm(-1)) and water bands (3000-3400 cm(-1)) indicates that the contact spot between the PDMS lens and the sapphire substrate is hete...

In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN) epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM) to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred o...

IR-visible sum-frequency generation (SFG) spectroscopy has been used in a total internal reflection geometry to study the molecular structure of polystyrene (PS) at PS/sapphire and PS/air interfaces, simultaneously. The symmetric vibrational modes of the phenyl rings dominate the SFG spectra at the PS/air interface as compared to the antisymmetric vibrational modes at the PS/sapphire interface....

In this paper, we characterized aluminum/sapphire interface structure by using high-resolution transmission electron microscopy. It was found that step structures of sapphire formed at the aluminum/sapphire interfaces during the liquid-phase bonding. It was discovered that the addition of silicon in aluminum significantly reduces the step growth at the interface. Silicon was found to segregate ...