The making of BaZrS3 thin films by molecular beam epitaxy (MBE) is demonstrated. forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. single-step MBE process results smooth on atomic scale, near-perfect stoichiometry and an atomically sharp interface LaAlO3 substrate. grow epitaxially via two competing growth modes: buffered epitaxy, a self-assembled laye...
