نتایج جستجو برای: rf pecvd

تعداد نتایج: 34809  

2006
A J Hart B O Boskovic A T H Chuang V B Golovko J Robertson

Carbon nanotubes (CNTs) and nanofibres (CNFs) are grown on bulk-micromachined silicon surfaces by thermal and plasma-enhanced chemical vapour deposition (PECVD), with catalyst deposition by electron beam evaporation or from a colloidal solution of cobalt nanoparticles. Growth on the peaked topography of plasma-etched silicon ‘micrograss’ supports, as well as on sidewalls of vertical structures ...

2010
Haiyan Ou Yiyu Ou Chuan Liu Rolf W. Berg Karsten Rottwitt

Different sizes of Ge nanocrystals embedded in a SiO2 matrix were formed by PECVD, and analyzed by TEM. Size effect of Ge nanocystals was demonstrated by Raman spectroscopy after excluding the thermal effect. OCIS codes: (160.4236) nanomaterial; (160.6000) semiconductor material;

Journal: :Biomedical Materials & Devices 2023

Abstract Cobalt chromium alloys (CoCr) are commonly used as total disc replacement components. However, there concerns about its long-term biological effects. Coating the CoCr with a ceramic could improve implant’s biocompatibility and wear resistance. Silicon nitride (SiNx) coatings have emerged recent alternative to this end. While many evaluated physical vapour deposition (PVD) techniques de...

Journal: :Plasma Processes and Polymers 2023

Zirconia layers are often used as thermal barriers. In recent years, depositions by chemical vapor deposition methods using a metalorganic precursor (MOCVD) have been primarily investigated. Here, we combine MOCVD with plasma activation - plasma-enhanced (PECVD]) of the gas phase and/or growth surface to lower temperature and allow for flexible coating design. PECVD causes be transformed into c...

2009
SUDHIR CHANDRA RAVINDRA SINGH Sudhir Chandra Vivekanand Bhatt Ravindra Singh

Fabrication of Micro-Electro-Mechanical-Systems (MEMS) requires deposition of films such as SiO2, Si3N4, ZnO, polysilicon, phosphosilicate glass (PSG), Al, Cr-Au, Pt, etc. for use as structural, sacrificial, piezoelectric and conducting material. Deposition of these materials at low temperature is desirable for fabricating sensors/actuators on temperature-sensitive substrates and also for integ...

Journal: :Chemosensors 2021

Silica (SiO2, silicon dioxide—a dielectric layer commonly used in electronic devices) is widely many types of sensors, such as gas, molecular, and biogenic polyamines. To form silica films, core shell or an encapsulated layer, silane has been a precursor recent decades. However, there are hazards caused by using silane, its being extremely flammable, the explosive air, skin eye pain. avoid thes...

2009
S. A. Filonovich

In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high deposition pressure ( 4 mbar), high plasma power and low substrate temperature ( 200 C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical properties is investigated. We determine the deposition conditions that lead to the formation of p-t...

2013
Costel Sorin Cojocaru Dohyung Kim Didier Pribat

Multi-walled carbon nanotubes (MWCNTs) have been grown on 7 nm Ni-coated substrates consisting of crystalline silicon covered with a thin layer (10 nm) of TiN, by combining hot-wire chemical vapor deposition (HWCVD) and direct current plasma-enhanced chemical vapor deposition (dc PECVD), at 620 -C. Acetylene (C2H2) gas is used as the carbon source and ammonia (NH3) and hydrogen (H2) are used ei...

2004
Robert Louis Alley Hongjie Dai

Figure 1: Scanning electron microscope image close-up of the trench, electrodes, and catalyst pads. The line outlining the trench shows the extent of the wet-etch undercut. Abstract: Semi-conducting carbon nanotubes (CNT) and germanium nanowires (GNWs) are desirable fieldeffect transistor (FET) elements because of their unique electrical properties and physical stability. Previous electromechan...

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