نتایج جستجو برای: random access time
تعداد نتایج: 2358137 فیلتر نتایج به سال:
superlattice-like structures for phase change random access memory Chun Chia Tan, Luping Shi, Rong Zhao, Qiang Guo, Yi Li, Yi Yang, Tow Chong Chong, Jonathan A. Malen, Wee-Liat Ong, Tuviah E. Schlesinger, and James A. Bain Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608 Department of Electrical and Computer Engi...
This paper presents results of an experiment in which Random Access Memory (RAM) diagrams were used to teach novice students C programming. Students were divided into two groups that were differently instructed. The control group was instructed in the traditional way while the experiment group was instructed with the aid of RAM diagrams employed throughout the course. Examination results from t...
The field programmable gate array (FPGA) market is expanding because FPGAs enable faster development times and lower development costs than mask programmable gate arrays (MPGAs).1) However, the conventional SRAM-based FPGA requires offchip, non-volatile PROMs to store configuration data, which increases the total device cost and the board area. To provide a low-cost solution for field programma...
A stochastic model of the resistive switching mechanism in bipolar oxide-based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. Our simulations of the temperature dependence of the electron occupation probability near the anode ...
Since MRAM cells have unlimited write endurance, they can be used as substitutes for DRAMs or SRAMs. MRAMs in electronic appliances enhance their convenience and energy efficiency because data in MRAMs are nonvolatile and retained even in the power-off state. Therefore, 2 to 16Mb standalone MRAMs have been developed [1-4]. However, in terms of their random-access times, they are not enough fast...
The Present day workstations, low-power processors, computers and super computers are using fast Static Random Access Memory (SRAMs) and will require, in the future, larger density memories with faster access time and minimum power consumption. Acknowledging the intense requirements for power, in current high performance memories of computing devices, the circuit designers have developed a numb...
Ternary content-addressable memory (TCAM) is often used in high speed search intensive applications such as ATM switch, IP filters. Hence, currently ZTCAM, is introduced which emulates the TCAM functionality with SRAM. It has some drawbacks such as low scalability, low storage density, slow access time and high cost. But this paper proposes novel memory architecture of existing Z-TCAM, but with...
Garbled RAM, introduced by Lu and Ostrovsky (Eurocrypt 2013), provides a novel method to garble RAM (Random Access Machine) programs directly. It can be seen as a RAM analogue of Yao’s garbled circuits such that, the size of the garbled program and the time it takes to create and evaluate it, is proportional only to the running time of the RAM program, avoiding the inefficient process of first ...
Ternary content addressable memories (TCAMs) perform high-speed search operation in a deterministic time. However, when compared with static random access memories (SRAMs), TCAMs suffer from certain limitations such as lowstorage density, relatively slow access time, low scalability, complex circuitry, and higher cost. One fundamental question is that can we utilize SRAM to combine it with addi...
We prove the Linear Time Hierarchy Theorems for random access machines and Gurevich abstract state machines. One long-term goal of this line or research is to prove lower bounds for natural linear time problems.
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