A monolithically integrated tunable laser and quantum-well phase modulator is demonstrated. Phase efficiency under forward bias is improved >20dB at low frequencies compared with reverse bias. Bandwidths >30 GHz are demonstrated in frequency modulation measurements. 2006 Optical Society of America OCIS codes: (230 4110) Modulators; (230 5590) Quantum Well Devices This research was supported by...

Articles you may be interested in The electronic properties of a two-electron multi-shell quantum dot-quantum well heterostructure Enhanced tunnel transport in disordered carbon superlattice structures incorporated with nitrogen Nonlinear transport in quantum-cascade lasers: The role of electric-field domain formation for the laser characteristics Electrical conductivity enhanced dielectric and...

The development and theory of an experiment to investigate quantum computation with trapped calcium ions is described. The ion trap, laser and ion requirements are determined, and the parameters required for quantum logic operations as well as simple quantum factoring are described.

Articles you may be interested in Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy Appl. Very low threshold single quantum well gradedindex separate...

The development and theory of an experiment to investigate quantum computation with trapped calcium ions is described. The ion trap, laser and ion requirements are determined, and the parameters required for quantum logic operations as well as simple quantum factoring are described.

Single trapped ions represent elementary quantum systems that are well isolated from the environment. They can be brought nearly to rest by laser cooling, and both their internal electronic states and external motion can be coupled to and manipulated by light fields. This makes them ideally suited for quantum-optical and quantum-dynamical studies under well-controlled conditions. Theoretical an...

We demonstrate continuous voltage control of the nonradiative transition lifetime in semiconductor heterostructures. The results were obtained by picosecond time-resolved experiments on biased SiGe valence band quantum well structures using a free electron laser. By varying the applied voltage, the intersubband hole relaxation times for quantum well structures were varied by a factor of 2 as th...

Carrier relaxation is a key issue in determining the efficiency of semiconductor optoelectronic device operation. Devices incorporating semiconductor quantum dots have the potential to overcome many of the limitations of quantum-well-based devices because of the predicted long quantum-dot excited-state lifetimes. For example, the population inversion required for terahertz laser operation in qu...

Optical implementations of quantum communication protocols typically involve laser fields. However, the standard description of the quantum state of a laser field is surprisingly insufficient to understand the quantum nature of such implementations. In this paper, we give a quantum informationtheoretic description of a propagating continuous-wave laser field and reinterpret various quantum-opti...

Articles you may be interested in An indirectly pumped terahertz quantum cascade laser with low injection coupling strength operating above 150K Improved terahertz quantum cascade laser with variable height barriers We report an experimental study of terahertz quantum cascade lasers with variable barrier heights based on the Al x Ga 1–x As/GaAs material system. Two new designs are developed bas...