نتایج جستجو برای: quantum dot laser

تعداد نتایج: 483820  

2007
NADER A. NADERI Nader A. Naderi Christos G. Christodoulou Vassilios Kovanis Yan Li

OF THESIS Submitted in Partial Fulfillment of the Requirements for the Degree of Master of Science Electrical Engineering The University of New Mexico Albuquerque, New Mexico

Journal: :Optics express 2010
Yiyang Gong Bryan Ellis Gary Shambat Tomas Sarmiento James S Harris Jelena Vuckovic

The lasing behavior of one dimensional GaAs nanobeam cavities with embedded InAs quantum dots is studied at room temperature. Lasing is observed throughout the quantum dot PL spectrum, and the wavelength dependence of the threshold is calculated. We study the cavity lasers under both 780 nm and 980 nm pump, finding thresholds as low as 0.3 microW and 19 microW for the two pump wavelengths, resp...

Journal: :Optics express 2012
Y Ding R Aviles-Espinosa M A Cataluna D Nikitichev M Ruiz M Tran Y Robert A Kapsalis H Simos C Mesaritakis T Xu P Bardella M Rossetti I Krestnikov D Livshits Ivo Montrosset D Syvridis M Krakowski P Loza-Alvarez E Rafailov

In this paper, we present the generation of high peak-power picosecond optical pulses in the 1.26 μm spectral band from a repetition-rate-tunable quantum-dot external-cavity passively mode-locked laser (QD-ECMLL), amplified by a tapered quantum-dot semiconductor optical amplifier (QD-SOA). The laser emission wavelength was controlled through a chirped volume Bragg grating which was used as an e...

Journal: :Optics express 2010
Chang-Yi Lin Frederic Grillot Yan Li Ravi Raghunathan Luke F Lester

The timing jitter performance of a 5 GHz quantum dot passively mode-locked laser is investigated at different harmonics in the RF spectrum. The necessity of measuring the phase noise at relatively large harmonic numbers is motivated experimentally in the context of determining the corner frequency, its correlation to the RF linewidth, and the related white noise plateau level. The single-sideba...

2012
Y. Hou J. R. Liu M. Buchanan A. J. Spring Thorpe P. J. Poole H. C. Liu Ke Wu Sjoerd Roorda X. P. Zhang

We report on a study of terahertz (THz) generation using implanted InGaAs photomixers and multi-wavelength quantum dot lasers. We carry out InGaAs materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime...

E. Karimzadeh Esfahani, M. Bagheri Harouni, R. Roknizadeh,

In this paper we consider electromagnetic field quantization in the presence of a dispersive and absorbing semiconductor quantum dot. By using macroscopic approach and Green's function method, quantization of electromagnetic field is investigated. Interaction of a two-level atom , which is doped in a semiconductor quantum dot, with the quantized field is considered and its spontaneous emission ...

2005
G. S. Solomon M. Agrawal

We discuss a THz laser device based on a semiconductor quantum dot (QD) gain medium, where the lasing occurs through discrete conduction states. An ensemble of QDs is selectively placed in a high quality cavity, called a microdisk, which is resonant with a terahertz intersublevel QD transition. We simulate the rate equations goveming iasing and discuss a variety of processes affecting lasing in...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه شهید بهشتی - دانشکده علوم 1386

چکیده ندارد.

2004
Alexander V. Tsukanov

We study theoretically the quantum dynamics of two interacting electrons in the symmetric double-dot structure under the influence of the bichromatic resonant pulse. The state vector evolution is studied for two different pulse designs. It is shown that the laser pulse can generate the effective exchange coupling between the electron spins localized in different dots. Possible applications of t...

Journal: :Nature materials 2009
E A Zibik T Grange B A Carpenter N E Porter R Ferreira G Bastard D Stehr S Winnerl M Helm H Y Liu M S Skolnick L R Wilson

Carrier relaxation is a key issue in determining the efficiency of semiconductor optoelectronic device operation. Devices incorporating semiconductor quantum dots have the potential to overcome many of the limitations of quantum-well-based devices because of the predicted long quantum-dot excited-state lifetimes. For example, the population inversion required for terahertz laser operation in qu...

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