Recent development advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many utility applications of power electronics are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To o...

In this study, a novel topology for symmetrical voltage source multilevel inverter is proposed, which comprises series connection of basic unit cells with H-bridge. It offers same voltage level with lower number of power semiconductor switches as compared with traditional cascaded Hbridge and other recent topologies, thereby reducing the number of gate drivers which in turn reduce the installat...

A comprehensive methodology to qualify the reliability of GaN products 2 Introduction The industry takes the reliability of silicon power transistors for granted due to over thirty years of experience and continuous improvement. This longstanding experience has resulted in a mature qualification methodology, whereby reliability and quality are certified by running standardized tests. These test...

Natural indicators of the electrical polarity of a direct current (DC) source is limited to semiconductor based diodes and transistors. Recently a novel bio-natural indicator of the polarity of a DC source have been reported. Mimosa Pudica or sensitive plant is found to be a natural detector of a DC source polarity, however the mechanism underlying this phenomenon is not known. This paper aims ...

The paper presents methods for the online estimation of the junction temperature (Tj) for IGBT modules with paralleled semiconductor chips, with each chip operating at different junction temperatures. Experimental and simulation results are presented. The Tj estimated from the gate-emitter voltage (Vge) during the IGBT switch off process was found to be very close to the average junction temper...

Absfnzst-Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold; Although conventionally the OB switch-off time in dispersive semiconductor laser ampliers is limited by the effective...

Article history: Received 29 June 2016 Accepted 8 July 2016 Available online 18 September 2016 SiC is a wide bandgap semiconductor with better electrothermal properties than silicon, including higher temperature of operation, higher breakdown voltage, lower losses and the ability to switch at higher frequencies. However, the power cycling performance of SiC devices in traditional silicon packag...

This study presents the simulation, fabrication and characterization ofmicromechanical radio frequency (RF) switch with micro inductors. The inductors areemployed to enhance the characteristic of the RF switch. An equivalent circuit model isdeveloped to simulate the performance of the RF switch. The behaviors of themicromechanical RF switch are simulated by the finite element method software,Co...