نتایج جستجو برای: polysilicon nanoparticles

تعداد نتایج: 108073  

2004
C. Gui M. Elwenspoek

This paper reports a new method for making high aspect ratio Single Crystalline Silicon (SCS) microstructures om multi layer substrates using Chemical Mechanical Polishing (CMP), Silicon Fusion Bonding (SFB) and Reactive Ion Etching (NE) techniques. First Si-Si02-PolySi-Si02-Si sandwich wafers were fabricated using CMP and SFB. Then microstructures were fabricated on these sandwich wafers using...

2004
Adisorn Tuantranont V. M. Bright

Micromachined thermal multimorph actuators for out-of-plane displacements have been designed and fabricated by Multi-Users MEMS Process (MUMPs) with a post-processing bulk etching step. Micromachined actuators have potential applications in micromanipulation and nanoposition such as manipulation of scanning tunneling microscope (STM) tips, nanopositioner for nano-assembly, micro/nanorobots and ...

2002
Larry L. Chu Darcee Nelson Andrew D. Oliver Yogesh B. Gianchandani

Microsystems using electrothermal bent-beam microactuators have been demonstrated for a variety of applications including optical attenuators, RF switches, and micro positioners for scanning microscopy, creating an important need for information on the longevity of these devices. This paper reports on the lifetime pulse testing results of polysilicon actuators. Devices have been operated up to ...

2011
Ming-Zhi Yang Ching-Liang Dai Chyan-Chyi Wu

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process was investigated. The structure of the ammonia sensor is composed of a sensitive film and polysilicon electrodes. The ammonia sensor requires a post-process to etch the sacrificial layer, and to coat the sensitive fil...

2011
Mohd Haris M. Khir Peng Qu Hongwei Qu

This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive sensing material. A full Wheatstone bridge was constructed through easy wiring allowed by the three metal layers in the 0.5 μm CMOS technology...

2012
Davide Sacchetto Shenqi Xie Veronica Savu Michael Zervas Giovanni De Micheli Jürgen Brugger Yusuf Leblebici

0167-9317/$ see front matter 2012 Elsevier B.V. A http://dx.doi.org/10.1016/j.mee.2012.07.048 ⇑ Corresponding author. E-mail address: [email protected] (D. Sacch We report on the top-down fabrication of vertically-stacked polysilicon nanowire (NW) gate-all-around (GAA) field-effect-transistors (FET) by means of Inductively Coupled Plasma (ICP) etching and nanostencil lithography. The nan...

2004
Ki Bang Lee Liwei Lin

MUMPs (Multi-User MEMS Process) based microchannels made of either glass or polysilicon have been successfully designed, fabricated and tested. The fabrication process used timed wet-chemical etching to selectively etch sacrificial materials with the assistance of etch holes. The prototype glass and polysilicon microchannels have cross-section areas of 70 m×4 m and 70 m×2 m, respectively, and b...

2003
A. Chaehoi L. Latorre S. Baglio

This paper presents a preliminary study concerning the use of Front-Side Bulk Micromachining (FSBM) for inertial sensing. When using such a low-cost fabrication approach, the obtained suspended structure do not feature important seismic mass while both CMOS design rules and wet etching do not allow for capacitive detection. Using the standard CMOS polysilicon for piezoresistive detection, obtai...

2001
Murat Okandan Paul Galambos

In the last decade, examples of devices manufactured with SUMMiT technology have demonstrated the capabilities of polysilicon surface micromachining [1]. Currently we are working on enhancements to this technology that utilize additional structural layers of silicon nitride to enable Microfluidics and BioMEMS applications. The addition of the silicon nitride layers allows the fabrication of mic...

2012
Roberto de la Rica César Fernández-Sánchez Antonio Baldi

The suitability of polysilicon as a material for the fabrication of interdigitated electrodes and their application to the development of sensors is studied in this work. The main interest in using this material lies in the possibility of obtaining integrated sensors with commercial CMOS technologies and simple post-processing steps. Electrodes with 3μm finger width and 3, 10, and 20μm spacing ...

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