نتایج جستجو برای: plasma deposition

تعداد نتایج: 439546  

Journal: :Blood 1987
E Fressinaud D Baruch C Rothschild H R Baumgartner D Meyer

Although it is well established that plasma von Willebrand Factor (vWF) is essential to platelet adhesion to subendothelium at high shear rates, the role of platelet vWF is less clear. We studied the respective role of both plasma and platelet vWF in mediating platelet adhesion to fibrillar collagen in a parallel-plate perfusion chamber. Reconstituted blood containing RBCs, various mixtures of ...

Journal: :Biosensors & bioelectronics 2010
C Volcke R P Gandhiraman V Gubala J Raj Th Cummins G Fonder R I Nooney Z Mekhalif G Herzog S Daniels D W M Arrigan A A Cafolla D E Williams

Here we have demonstrated a solventless plasma-based process that integrates low-cost, high throughput, high reproducibility and ecofriendly process for the functionalization of the next-generation point-of-care device platforms. Amine functionalities were deposited by plasma-enhanced chemical vapour deposition (PECVD) using a new precursor. The influence of the plasma RF power and the depositi...

1999
L. Rymell

A tabletop high-brightness line-emitting laser-plasma soft x-ray source utilizing single microscopic droplets as target is shown to produce several orders of magnitude less debris than conventional-target sources. Quantitative measurements of debris deposition rates and x-ray flux at different directions around the droplet plasma are presented. With ethanol droplets and a 10 HZ, 70 m.l/pulse la...

2003
S. Hofmann C. Ducati R. J. Neill A. C. Ferrari J. Geng R. E. Dunin-Borkowski

Silicon nanowires were selectively grown at temperatures below 400 °C by plasma enhanced chemical vapor deposition using silane as the Si source and gold as the catalyst. A detailed growth study is presented using electron microscopy, focused ion beam preparation, and Raman spectroscopy. A radio-frequency plasma significantly increased the growth rate. The Si nanowires show an uncontaminated, c...

Journal: :Advanced Materials Interfaces 2023

This paper describes a study where an argon cold plasma jet, generated by dielectric-barrier discharge (DBD), is combined with nanosecond laser ablation (248 nm, 25 ns, 10 Hz) to deposit silver particle aerosols onto the substrate at atmospheric pressure. The deposition of examined using various microscopy techniques and absorption spectroscopy for jet produced operating DBD in normal reversed ...

Journal: :J. Applied Mathematics 2011
Jürgen Geiser Meraa Arab

We are motivated to model PE-CVD plasma enhanced chemical vapor deposition processes for metallic bipolar plates, and their optimization for depositing a heterogeneous layer on the metallic plate. Moreover a constraint to the deposition process is a very low pressure nearly a vacuum and a low temperature about 400K . The contribution of this paper is to derive a multiphysics system of multiple ...

1999
R. Platz S. Wagner A. Shah B. Rech

The first comparative study of DC, RF and VHF excitation for the plasma enhanced chemical vapor deposition (PECVD) of intrinsic layers of hydrogenated amorphous silicon (a-Si:H) is presented. The effects of hydrogen dilution on film stability are emphasized. Growth rates at comparable plasma power are presented for substrate temperatures between 100°C and 300°C and for various H2 dilution ratio...

2009
Shankar Kumar Selvaraja Erik Sleeckx Marc Schaekers Wim Bogaerts Dries Van Thourhout Pieter Dumon Roel Baets

We report the fabrication of low-loss amorphous silicon photonic wires deposited by plasma enhanced chemical vapor deposition. Single mode photonic wires were fabricated by 193nm optical lithography and dry etching. Propagation loss measurements show a loss of 3.46dB/cm for photonic wires (480×220nm) and 1.34dB/cm for ridge waveguides.

Journal: :American J. Computational Mathematics 2011
Jürgen Geiser

In this article a new approach is considered for implementing operator splitting methods for transport problems, influenced by electric fields. Our motivation came to model PE-CVD (plasma-enhanced chemical vapor deposition) processes, means the flow of species to a gasphase, which are influenced by an electric field. Such a field we can model by wave equations. The main contributions are to imp...

Journal: :Microelectronics Reliability 2007
C. Y. Lu H. C. Lin Y. J. Lee

Negative-bias-temperature instability (NBTI) characteristics of strained p-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) under dynamic and AC stressing were investigated in this work. The compressive strain in the channel was deliberately induced by a plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) capping layer in this study. It was found that th...

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