Fig.2 Amplifier under test. Amplifiers can operate in classes A, B, AB, C, D, E and F [2]. We tested class A amplifier made by „Microwave Power Devices“, Model: LWA 4690-1/1837, based on bipolar devices (Fig.2). Usually, 1dB compression point, gain and two-tone third-order intercept point are measured as the amplifier figure of merit. As specified by manufacturer, the frequency range of the amp...

This paper presents an 3.5 GHz low noise amplifier that uses a two-stage configuration, using 0.35 m AlGaN/GaN HEMT on silicon substrate technology. The first stage has a cascode topology to achieve high gain, better stability and well reverse isolation. The second stage has a RC-feedback topology for wideband matching. The Tmatching network is used for broadband output matching. The results s...

This article presents a low-power fully-differential 3.5GHz wideband complementary metal oxide semiconductor (CMOS) lownoise amplifier (LNA) based on the LC-ladder match network approach. To have low power consumption and high power gain, two commonsource stages are cascaded for reusing the bias current. To have wideband low noise figure, the gate width of the input transistor is determined fro...

In this paper, a new design of concurrent dual-band Low Noise Amplifier (LNA) for multi-band single-channel Global Navigation Satellite System (GNSS) receivers is proposed. This new structure is able to operate concurrently at frequency of 1.2 and 1.57 GHz. Parallel and series resonance parts are employed in the input matching in order to achieve concurrent performance. With respect to used pse...

Abstract A differential Low-noise Amplifier (DLNA) using 0.13 μm CMOS technology is presented. The amplifier is optimized for Bluetooth Receiver applications operating in the 2.4 2.5 GHz band. The inductive degeneration topology used in the DLNA provides low noise, high gain and a large IIP3. The differential LNA was added a cascade output stage to the Single-ended source degenerated stage. Sim...

A monolithic 5 GHz image reject mixer using a 0.5-μm GaAs MESFET technology is designed and simulated. The Mixer exhibits a 13.56 dB down-conversion gain, a SSB (Single SideBand) noise figure of 11.90 dB, an input IP3 (third order intercept point) of –3.73 dBm and a P1dB (1-dB compression point) of –11.0 dBm. The critical issue in the image reject mixer is the phase accuracy and magnitude balan...

In this paper, by using the baseband noise cancellation, a CMOS mixer-first analog receiver with power reduction is proposed. Based on current-mirror transimpedance amplifier structure, positive capacitive feedback applied to manipulate poles/zeros location, enabling wide bandwidth and out-of-band second-order filtering profile. The additional radio frequency N-path 40dB/dec roll-off absorb int...