We report on the first experimental evidence of a Schottky barrier effect produced by the action of light in an otherwise purely Ohmic contact between a nominally undoped photorefractive titanosillenite Bi12TiO20 crystal and a transparent conductive SnO2 electrode. The photorefractive crystal is sandwiched between two transparent electrodes and a Schottky barrier is built up in the illuminated ...

Torsional Alfvén waves propagating in the Earth’s core have been inferred by inversion techniques applied to geomagnetic models. They appear to propagate across the core but vanish at the equator, exchanging angular momentum between core and mantle. Assuming axial symmetry, we find that an electrically conducting layer at the bottom of the mantle can lead to total absorption of torsional waves ...

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2...

The effect of the Hall term on the evolution of the magnetorotational instability (MRI) in weakly ionized accretion disks is investigated using local axisymmetric simulations. First, we show that the Hall term has important effects on the MRI when the temperature and density in the disk is below a few thousand K and between 1013 and 1018 cm−3 respectively. Such conditions can occur in the quies...

Abstract Following the Caldeira-Leggett approach to describe dissipative quantum systems the structure function for a harmonic oscillator with Ohmic dissipation is evaluated by an analytic continuation from euclidean to real time. The analytic properties of the Fourier transform of the structure function with respect to the energy transfer (the “characteristic function”) are studied and utilize...

Abstract Developing Ohmic contact systems or achieving low resistance is significant for high‐performance semiconductor devices. This work comprehensively investigates the interfacial properties of CrX 2 N 4 (X = C, Si) based field‐effect transistors (FETs) with different metal (Ag, Au, Cu, Ni, Pd, Pt, Ti, and graphene) electrodes by using electronic structure calculations quantum transport sim...

A new ohmic contact scheme for gallium nitride is presented. The use of Nitrideforming metal Over Gallide-forming metal, “NOG”, can modify the thermodynamic activity of N and Ga near the interface. This in turn can modify the near-surface point defect concentrations, particularly the vacancies of Ga and N. The principle of this contact scheme was shown to be consistent with results from Ni/Au, ...

Along with rapidly developing nanotechnology, new types of analytical instruments and techniques are needed. Here we report an alternative procedure for electrical measurements on semiconductor nanowhiskers, allowing precise selection and visual control at close to atomic resolution. We use a combination of two powerful microscope techniques, scanning tunneling microscopy (STM) and simultaneous...

The localized coupling between piezoelectric and photoexcitation effects of a ZnO micro/nanowire device has been studied for the first time with the goal of designing and controlling the electrical transport characteristics of the device. The piezoelectric effect tends to raise the height of the local Schottky barrier (SB) at the metal-ZnO contact, while photoexcitation using a light that has e...

A perfect ohmic contact is formed at the interface of indium tin oxide (ITO) and N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) using ReO3 as the interfacial layer. The hole injection efficiency is close to 100% at the interface, which is much higher than those for interfacial layers of 1,4,5,8,9,11-hexaazatripheylene hexacarbonitrile (HAT-CN) and MoO3. Interestingly, the ReO3 and MoO3...