Infrared reflection and Raman spectroscopies have been employed to derive zone center and some zone boundary phonon energies in wurtzite and in zincblende GaN (Table 1.) [1-10]. Phonon and coupled modes have been employed to characterize stress conditions and carrier densities in thin films and device structures. Due to the wide bandgap non-resonant Raman scattering is easily performed using vi...

AlGaN/GaN high-electron-mobility transistors (HEMT) have been grown by radio frequency molecular beam epitaxy (RF-MBE) on 3” Si substrates. A record low contact resistance Rc ~ 0.11 .mm has been achieved for GaN HEMTs on Si by using non alloyed ohmic contacts regrown by MBE. Owing to the low contact resistance a 75-nm gate length unpassivated HEMT shows intrinsic current gain cut-off frequency ...

We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire fil...

let $g$ be a non-abelian group and let $z(g)$ be the center of $g$. associate with $g$ there is agraph $gamma_g$ as follows: take $gsetminus z(g)$ as vertices of$gamma_g$ and joint two distinct vertices $x$ and $y$ whenever$yxneq yx$. $gamma_g$ is called the non-commuting graph of $g$. in recent years many interesting works have been done in non-commutative graph of groups. computing the clique...

we study the exponential decay of global solution for an n-dimensional thermo-elasticity systemin a bounded domain of ℜn . by using the multiplier technique and constructing an energy functional welladapted to the system, the exponential decay is proved.

this paper presents approximate analytical solutions for nonlinear oscillators using the multi-step homotopy analysis method (msham). the proposed scheme is only a simple modification of the homotopy analysis method, in which it is treated as an algorithm in a sequence of small intervals (i.e. time step) for finding accurate approximate solutions to the corresponding problems. several illustrat...

We will present a comparison between GaN grown on cand r-plane sapphire by gas-source molecular beam epitaxy (GSMBE) using solid source elemental Ga with untracked ammonia (NH,). Improved GaN film quality was found for samples grown at substrate temperatures above 700°C with optimized temperatures at 780°C. GaN deposited on a low-temperature ( 350°C) GaN buffer layer grown using an if-plasma ra...

We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and s...

In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 10(10) to 1.1 × 10(11) cm(-2) by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN forma...